Abstract: Materials for photoelectric conversion devices, consisting of polyacene derivatives represented by general formula (I) below; and photoelectric conversion devices made by using the materials. The materials for photoelectric conversion devices have excellent workability and productivity, exhibit low toxicity, are easily flexibilized, and have high photoelectric conversion efficiencies. In the formula, R1, R2, R3, R4, R5, R6, R7, R8, A1, A2, A3, and A4 are independent from each other, either the same or different, and each represents a hydrogen atom, a halogen atom, an optionally substituted hydrocarbon group having 1 to 40 carbon atoms, or the like. n is an integer of 1 or more.

Abstract: Materials for photoelectric conversion devices, consisting of polyacene derivatives represented by general formula (I) below; and photoelectric conversion devices made by using the materials. The materials for photoelectric conversion devices have excellent workability and productivity, exhibit low toxicity, are easily flexibilized, and have high photoelectric conversion efficiencies. In the formula, R1, R2, R3, R4, R5, R6, R7, R8, A1, A2, A3, and A4 are independent from each other, either the same or different, and each represents a hydrogen atom, a halogen atom, an optionally substituted hydrocarbon group having 1 to 40 carbon atoms, or the like. n is an integer of 1 or more.

Abstract: A photoelectric conversion element having a photoelectric conversion layer between opposing anode electrode and cathode electrode, the photoelectric conversion layer having a structure in which (1) a p-type semiconductor layer and (2) a layer mixing a p-type semiconductor with an n-type semiconductor, and, as required, (3) an n-type semiconductor layer or a metal oxide layer are sequentially layered, characterized in that at least one photoelectric conversion efficiency improving means out of the following (a)-(c) is used. (a) An organic semiconductor thin film with a charge mobility of at least 0.005 cm2/V·sec being used as at least one semiconductor layer in (1)-(3). (b) The energy gap between the work function of the anode electrode and the HOMO (highest occupied molecular orbit) of the p-type semiconductor layer in (1) and/or the energy gap between the work function of the cathode electrode and the LUMO (lowest unoccupied molecular orbit) of the n-type semiconductor layer in (3) being up to 0.5 eV.

Abstract: Materials for photoelectric conversion devices, consisting of polyacene derivatives represented by general formula (I) below; and photoelectric conversion devices made by using the materials. The materials for photoelectric conversion devices have excellent workability and productivity, exhibit low toxicity, are easily flexibilized, and have high photoelectric conversion efficiencies. In the formula, R1, R2, R3, R4, R5, R6, R7, R8, A1, A2, A3, and A4 are independent from each other, either the same or different, and each represents a hydrogen atom, a halogen atom, an optionally substituted hydrocarbon group having 1 to 40 carbon atoms, or the like. n is an integer of 1 or more.

Abstract: The present invention provides organic electroluminescent elements selected from polyacene derivatives represented by general formula (I) below: [wherein, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, A1 and A2, which are the same or different, each represents hydrogen atom, a hydrocarbon group, etc., and n denotes an integer of not less than 1]. The organic electroluminescent elements of the present invention can provide materials for organic electroluminescent elements and organic electroluminescent elements, which are excellent in stability, durability, luminance and luminance efficiency.

Abstract: A fatty acid and/or an alkyl ester of a fatty acid and isethionic acid are allowed to react at a temperature of not more than 130° C. The present invention provides a process for preparing a fatty ester of isethionic acid or a salt thereof exhibiting an ameliorated hue and smell and in which few by-products are produced.