Abstract: An electrostatic chuck is provided, having an insulation layer including a mount plane on which a wafer is mounted, an inner electrode provided in the insulation layer, and projecting portions protruding from the mount plane which include contact planes that contact the wafer. A backside gas flows into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain the temperature uniformity of the wafer. The total areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to the area of the inner electrode, and the heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.

Abstract: An electrostatic chuck having an insulation layer includes a mount plane on which a wafer is mounted, an inner electrode provide in the insulation layer, and projecting portions protruded from the mount plane which include contact planes to be contacted to the wafer. A backside gas is flowed into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain a temperature uniformity of the wafer. A total amount of areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to an area of the inner electrode, and heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.

Abstract: A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.

Abstract: The temperature of a substrate, such as a semiconductor wafer, is controlled in the processing of the substrate, such as sputtering, etching, deposition, or the like. According to the present invention, an accurately controlled temperature environment may be achieved by measuring the temperature and emissivity of heat from the surface of the substrate being processed, remotely as well as on a real-time basis, and correcting the temperature to reflect the actual temperature according to the emissivity as measured.

Abstract: The temperature of a substrate, such as a semiconductor wafer, is controlled in the processing of the substrate, such as sputtering, etching, deposition, or the like. According to the present invention, an accurately controlled temperature environment may be achieved by measuring the temperature and emissivity of heat from the surface of the substrate being processed, remotely as well as on a real-time basis, and correcting the temperature to reflect the actual temperature according to the emissivity as measured.