Patents by Inventor Kiyoshi Nonaka

Kiyoshi Nonaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9816200
    Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: November 14, 2017
    Assignees: TAIHEIYO CEMENT CORPORATION, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Kenta Masuda, Kouki Ichitsubo, Masakazu Suzuki, Kiyoshi Nonaka, Tomohisa Kato, Hideaki Tanaka
  • Publication number: 20160160386
    Abstract: A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm2/g to 1,000 cm2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.
    Type: Application
    Filed: November 27, 2013
    Publication date: June 9, 2016
    Inventors: Kenta MASUDA, Kouki ICHITSUBO, Masakazu SUZUKI, Kiyoshi NONAKA, Tomohisa KATO, Hideaki TANAKA
  • Patent number: 5570458
    Abstract: A tracking apparatus and method for controlling the position and movement of a manipulator which holds an effector. An actual work path drawn on a workpiece is detected by a sensor. Predetermined taught path data is amended according to the detected work path, and the effector held by the manipulator is drawn to exactly track the work path on the workpiece. The effector is controlled so that the effector tracks the work path accurately even under conditions when detection data from the sensor has low reliability or contains errors.
    Type: Grant
    Filed: March 28, 1995
    Date of Patent: October 29, 1996
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Akira Umeno, Kiyoshi Nonaka, Takao Kakizaki