Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.

Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.

Abstract: The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.

Abstract: A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.

Abstract: A semiconductor device substrate includes a substrate body having a wiring layer. A base is formed by a material that is different from a material of the substrate body. The base supports the substrate body, and has an opening forming portion where a semiconductor element is mounted. A reinforcing member is larger than the opening forming portion, provided in the substrate body at a portion corresponding to the opening forming portion, and reinforces the substrate body at the portion corresponding to the opening forming portion.

Abstract: A capacitor device of the present invention includes a substrate, a float electrode formed on the substrate, a valve metal film formed on the float electrode, a dielectric film formed on the valve metal film by applying an anodic oxidation to a part of the valve metal film, and a pair of electrodes provided in areas overlapping with two different parts of the float electrode on the dielectric film respectively.

Abstract: A capacitor formed of parallel wiring lines and a capacitor dielectric film positioned between adjacent wiring lines and in direct contact with each of said wiring lines. A method of producing such a capacitor is also disclosed.

Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.

Abstract: A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.

Abstract: A substrate includes a plurality of insulation layers forming a laminated structure and a built-in capacitor formed in the laminated structure, wherein the laminated structure includes a layer of baked organic polysilane.

Abstract: The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.

Abstract: A substrate includes a plurality of insulation layers forming a laminated structure and a built-in capacitor formed in the laminated structure, wherein the laminated structure includes a layer of baked organic polysilane.

Abstract: The invention is directed to a thin-film capacitor device that is adapted to be mounted on a printed wiring board together with an LSI device. After forming a plurality of grooves in a core substrate, a first conductive film is formed, and a first conductor is filled into each groove. After forming a metal film on the first conductive film, a dielectric film is generated by selective anodic oxidation of the metal film. A second conductive film is formed on the dielectric film, and an electrode connected to the second conductive film is formed. After removing the back surface of the core substrate until the grooves are exposed therein, an electrode for connection to the first conductor in each groove is formed. A capacitor is formed by the first conductive film and second conductive film sandwiching the dielectric film therebetween.

Abstract: A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.

Abstract: A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.

Abstract: A capacitor formed of parallel wiring lines and a capacitor dielectric film positioned between adjacent wiring lines and in direct contact with each of said wiring lines. A method of producing such a capacitor is also disclosed.

Abstract: A thin-film capacitor comprising a first thin-film electrode, a second thin-film electrode, and a thin dielectric film arranged therebetween and formed of a tantalum oxide layer and an aluminum oxide layer neighboring thereto. A method of producing such a thin-film capacitor is also disclosed.

Abstract: A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,?) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.

Abstract: A capacitor device of the present invention includes a substrate, a float electrode formed on the substrate, a valve metal film formed on the float electrode, a dielectric film formed on the valve metal film by applying an anodic oxidation to a part of the valve metal film, and a pair of electrodes provided in areas overlapping with two different parts of the float electrode on the dielectric film respectively.

Abstract: A method of manufacturing a semiconductor device substrate includes the steps of: arranging on a base a temporary fixing member for temporarily fixing an electronic component; temporarily fixing the electronic component on the base by the temporary fixing member; forming a substrate body on the base and the electronic component; removing a portion of the base which portion corresponds to the electronic component, thereby exposing the temporary fixing member; and removing the temporary fixing member, thereby enabling the electronic component to make an external connection.