Abstract: The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4 and O2 to form the plurality of contact hole, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes.

Abstract: A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 ?m (preferably, 3 ?m) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

Abstract: A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 ?m (preferably, 3 ?m) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

Abstract: The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4 and O2 to form the plurality of contact hole, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes.