Patents by Inventor Kiyotaka MIZUKAMI

Kiyotaka MIZUKAMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MIS-type semiconductor device
    Patent number: 9793369
    Abstract: The present invention provides a MIS-type semiconductor device having a ZrOxNy gate insulating film in which threshold voltage shift is suppressed, thereby achieving stable operation. In the MIS-type semiconductor device having a gate insulating film on the semiconductor layer and a gate electrode on the gate insulating film, with a gate applied voltage of 5 V or more, the gate insulating film is formed of ZrOxNy (x and y satisfy the relation: x>0, y>0, 0.8?y/x?10, and 0.8?0.59x+y?1.0). The MIS-type semiconductor device having such a gate insulating film can perform stable operation because there is no shift in the threshold voltage even if a high voltage is applied to the gate electrode.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: October 17, 2017
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Tohru Oka, Takahiro Sonoyama, Kiyotaka Mizukami
  • Manufacturing method of MIS-type semiconductor device, including heating a zirconium oxynitride (ZrON) layer
    Patent number: 9299567
    Abstract: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: March 29, 2016
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Kiyotaka Mizukami, Takahiro Sonoyama, Toru Oka, Junya Nishii
  • MIS-type Semiconductor Device
    Publication number: 20160064502
    Abstract: The present invention provides a MIS-type semiconductor device having a ZrOxNy gate insulating film in which threshold voltage shift is suppressed, thereby achieving stable operation. In the MIS-type semiconductor device having a gate insulating film on the semiconductor layer and a gate electrode on the gate insulating film, with a gate applied voltage of 5 V or more, the gate insulating film is formed of ZrOxNy (x and y satisfy the relation: x>0, y>0, 0.8?y/x?10, and 0.8?0.59x+y?1.0). The MIS-type semiconductor device having such a gate insulating film can perform stable operation because there is no shift in the threshold voltage even if a high voltage is applied to the gate electrode.
    Type: Application
    Filed: August 27, 2015
    Publication date: March 3, 2016
    Inventors: Tohru Oka, Takahiro Sonoyama, Kiyotaka Mizukami
  • MANUFACTURING METHOD OF MIS-TYPE SEMICONDUCTOR DEVICE
    Publication number: 20140287572
    Abstract: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.
    Type: Application
    Filed: February 3, 2014
    Publication date: September 25, 2014
    Applicant: TOYODA GOSEI CO., LTD.
    Inventors: Kiyotaka MIZUKAMI, Takahiro Sonoyama, Toru Oka, Junya Nishii