Abstract: A one-part seal material composition curable at ambient temperature is provided that can meet all the requirements of: adhesiveness to weight saving materials; strength which can endure use in automotive parts; viscosity appropriate for enhancing efficiency of mass production; and fuel vapor sealing properties, and an intake manifold using the same. In a one-part seal material composition curable at ambient temperature which is hardened by a atmospheric moisture, (A) a polyacrylate having the end blocked with a hydrolyzable silyl group; and (B) a plasticizer are included, in which the content of the component (B) is set to be 15 parts by mass to 35 parts by mass per 100 parts by mass of the component (A). Furthermore, an intake manifold is produced using the composition.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: An image sensor provided with: a plurality of photodiodes arranged on a surface of a semiconductor substrate, the photodiodes each including a first region of a first conductivity type provided on the semiconductor substrate, a second region of a second conductivity type provided on the first region, the second conductivity type being different from the first conductivity type, and a signal extraction region of the second conductivity type provided on the second region; and an isolation region which electrically isolates the second regions of each adjacent pair of photodiodes from each other, the isolation region including a first trench provided between the second regions of the adjacent photodiodes and an oxide film provided on the first trench in the vicinity of surfaces of the second regions and having a greater width than the first trench.

Abstract: An image sensor provided with: a plurality of photodiodes arranged on a surface of a semiconductor substrate, the photodiodes each including a first region of a first conductivity type provided on the semiconductor substrate, a second region of a second conductivity type provided on the first region, the second conductivity type being different from the first conductivity type, and a signal extraction region of the second conductivity type provided on the second region; and an isolation region which electrically isolates the second regions of each adjacent pair of photodiodes from each other, the isolation region including a first trench provided between the second regions of the adjacent photodiodes and an oxide film provided on the first trench in the vicinity of surfaces of the second regions and having a greater width than the first trench.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Abstract: A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Abstract: An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.

Abstract: An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.

Abstract: To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.

Abstract: A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.

Abstract: An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulting thin film therefrom.

Abstract: An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.

Abstract: An electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.

Abstract: This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.

Abstract: This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.

Abstract: The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.

Abstract: To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).

Abstract: To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7.