Abstract: A method of laser irradiation including reflecting a linear laser beam from a mirror to bend an optical path of the laser beam, adjusting a width of the laser beam in the short axis direction of the laser beam whose optical path is bent by the mirror, by a short axis homogenizer, and irradiating an amorphous silicon semiconductor on a translucent substrate with the laser beam whose width in the short axis direction is adjusted by the short axis homogenizer, wherein the intensity of the laser beam is adjusted by adjusting the angle of the mirror.

Abstract: An object of the present invention is to simplify steps for manufacturing a matrix array substrate by reducing the number of masks being necessary to manufacture and to improve yield ratio of the matrix array substrate. According to the present invention, on a glass substrate, scanning lines, signal lines, a first insulated film, a second insulated film, an unprocessed semiconductor film, an unprocessed channel protective film, unprocessed low resistance semiconductor film, and Mo/Al/Mo laminated film are formed. Then, the source electrodes, the drain electrodes, the signal lines, a semiconductor film, and a low resistance semiconductor film are formed at a time by patterning using a common mask pattern. Display pixel electrodes cover upper surfaces of the source electrodes, the drain electrodes, the semiconductor film, the scanning line pads, and the signal line pads.

Abstract: A method of patterning a thin layer into a predetermined shape on the basis of a pattern layer arranged in a thin layer formed in a substrate comprises a first step of soaking the substrate in a first solution to etch off the thin layer on the basis of the pattern layer, a second step of spraying a second solution having the same composition as that of an etching solution used in a third step to wash the substrate, and a third step of soaking the substrate in a third solution to further etch the thin layer.

Abstract: A method of forming a fine wiring pattern by sputtering and patterning which is characterized in that the potential difference between the anode and cathode in the sputtering apparatus is lower than 570V. The resulting fine wiring pattern is free of defects due to splash. This method is effective particularly in the production of array substrates for the flat-panel display device which needs aluminum fine lines to meet the requirement for finer pixels and larger display area.

Abstract: A method of forming a fine wiring pattern by sputtering and patterning which is characterized in that the potential difference between the anode and cathode in the sputtering apparatus is lower than 570V. The resulting fine wiring pattern is free of defects due to splash. This method is effective particularly in the production of array substrates for the flat-panel display device which needs aluminum fine lines to meet the requirement for finer pixels and larger display area.

Abstract: A light-shielding film, and a liquid crystal display device including the light-shielding film, and a material suitable for forming the light-shielding film. The light-shielding film includes at least a film prepared from an inorganic insulating material and fine particles of metal and/or semi-metal dispersed in the insulating material film. The liquid crystal display device includes a display pixel electrode array substrate, a counter substrate, and a liquid crystal layer interposed between the two substrates. The light-shielding film is formed on the display pixel electrode array substrate of the liquid crystal display device.