Abstract: A power semiconductor component is specified which provides for a significant reduction in the thickness of the semiconductor substrate (1) whilst at the same time optimizing the switching losses. A transparent emitter (6) and a stop layer (7) are arranged to provide a thin semiconductor and optimized switching losses. The means can be used both in semiconductor switches such as IGBT, MCT or GTO and in diodes.

Abstract: A controlled turn-off power semiconductor device is proposed which is subdivided into unit cells and which comprises five layers in a p-n-p-n-p sequence, namely a p-type emitter layer (9), an n-type base layer (8), a p-type base layer (7), an n-type emitter layer (6) and a p-doped contact region (5) between an anode (a) and a cathode (K). In every unit cell a first MOSFET (M1) which can be driven via a first insulated gate (G1) is provided on the cathode side for switching between the five-layer structure and a conventional thyristor four-layer structure. Further, a breakdown between the contact region (5) and the n-type emitter layer (6) is prevented during turning-off. As a result of the switchable five-layer structure, a current filamentation is effectively avoided during turning-off.

Abstract: A turn-off power semiconductor component subdivided into unit cells (EZ), including between an anode (A) and a cathode (K) in a semiconductor substrate (1) five layers in p-n-p-n-p sequence, namely an anode layer (10) an n-type base layer (9), a p-type base layer (8), a turn-off region (6), a cathode region (7) adjoining the turn-off region, and a p-doped short-circuit region (5). On the cathode side in every unit cell (EZ), a first MOSFET (M1) which can be driven via a first insulated gate electrode (G1) is provided for the purpose of switching between the five-layer structure and a conventional thyristor four-layer structure. A second MOSFET (M2) having a second gate electrode (G2) prevents a breakdown between the p-type short-circuit region (5) and the turn-off region (6) during turn-off.