Abstract: A dental material having at least one copolymer obtained by (I) copolymerizing one or more monomers MG having a polymerizable (meth)acrylate group, one or more OH group-containing (meth)acrylates MF, one or more strongly acidic adhesive monomers MH and optionally of one or more polymerizable carboxylic acid monomers MCS, (II) reacting the resulting copolymer A0 in a polymer-analogous reaction with a functionalized, radically polymerizable monomer MP, which reacts with the OH groups of the monomer MF in the polymer chain of A0 to form a copolymer AP having pendant polymerizable groups, and (III) neutralizing the copolymer Ap with a base. The material is particularly suitable as a dental adhesive.

Abstract: The invention relates to an implant (1) for osteosynthesis, comprising a securing region (3) that has a plurality of holes (2) for receiving securing means, and two projections (4) which extend away, at least partially curved, from said securing region (3), wherein at least one of the two projections (4) takes the form of a snap-on lug (5) that can snap onto a bone segment (7, 8) of a mammal bone (6); the invention also relates to an implant kit comprising such an implant (1).

Abstract: The invention relates to an implant (1) for osteosynthesis, comprising a securing region (3) that has a plurality of holes (2) for receiving securing means, and two projections (4) which extend away, at least partially curved, from said securing region (3), wherein at least one one of the two projections (4) takes the form of a snap-on lug (5) that can snap onto a bone segment (7, 8) of a mammal bone (6); the invention also relates to an implant kit comprising such an implant (1).

Abstract: A maxillomandibular fixation (MMF) device having an arch bar with a plurality of spaced tabs and gaps, and further having apertured mounting plate members mounted onto the arch bar, each mounting plate member having a slot to receive a tab on the arch bar, whereby the mounting plate members may be repositioned laterally along the arch bar from one tab to another prior to affixing the MMF device to the maxilla or mandible of a patient in order to position the mounting plate members at locations where the underlying tooth root will not be damaged by insertion of a bone screw.

Abstract: The invention relates to a field-effect transistor and a method for its manufacturing having at least one layer, said layer comprising a III-V compound semiconductor, wherein the compound semiconductor comprises at least one element from the chemical group III being selected from any of gallium, aluminum, indium and/or boron and wherein the compound semiconductor comprises at least one element from the chemical group V being selected from nitrogen, phosphorous and/or arsenic, wherein the compound semiconductor comprises at least nitrogen, wherein the field-effect transistor comprises at least any of a source electrode and/or a drain electrode, said source electrode and/or drain electrode comprising at least one doped region extending from the surface into the at least one layer, wherein the depth of penetration of said doped region is selected from approximately 10 nm to approximately 200 nm.

Abstract: A maxillomandibular fixation (MMF) device having an arch bar with a plurality of spaced tabs and gaps, and further having apertured mounting plate members mounted onto the arch bar, each mounting plate member having a slot to receive a tab on the arch bar, whereby the mounting plate members may be repositioned laterally along the arch bar from one tab to another prior to affixing the MMF device to the maxilla or mandible of a patient in order to position the mounting plate members at locations where the underlying tooth root will not be damaged by insertion of a bone screw.

Abstract: A detachable actuator arm as part of or in combination with an osteogenesis distractor device, the actuator arm being detachable from the distraction mechanism of the distractor device by manipulation of a proximally disposed release mechanism.

Abstract: One or more arrays of flexible, disposable, bone plate sizers with corresponding arrays of permanent bone plates, systems using these bone plate sizers and/or templates, and methodologies using these bone plate sizers and/or templates are embodied. Each array of disposable bone plate sizers has a plurality of sizers having differing configurations and sizes, each of the disposable sizers in a given array corresponding to a particular bone screw size. Each of the disposable bone plate sizers in a given array are mounted upon and easily detachable from a frame member. The disposable bone plate sizers may be malleable such that may be manipulated by the surgeon into the desired three-dimensional shape to match the contour of the bone segments to be joined, thereby providing a template to shape the corresponding permanent bone plate.

Abstract: The invention relates to a reduction forceps comprising a first rod and a second rod, which are supported on a swivel joint defining an axis of rotation such that they are pivotable relative to one another, the first rod comprising on one side of the swivel joint a first jaw and the second rod comprising, on the same side of the swivel joint, a second jaw provided for cooperation with the first jaw, both said jaws having defined thereon contact points for contacting a bone or a bone plate, said contact points being movable in a common pivoting plane, which comprises the swivel joint and in which the axis of rotation extends perpendicularly, and at least one of the jaws being sectionwise displaced in the direction of a plane extending parallel to the pivoting plane.

Abstract: A detachable actuator arm as part of or in combination with an osteogenesis distractor device, the actuator arm being detachable from the distraction mechanism of the distractor device by manipulation of a proximally disposed release mechanism.

Abstract: An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

Abstract: The invention relates to a method for producing a layer by means of MOVPE, wherein the layer comprises or consists of at least one III-V compound semiconductor and carbon, wherein the compound semiconductor comprises at least one element of main group III of the periodic table which is selected from any of gallium, aluminum, indium and/or boron, and wherein the compound semiconductor comprises at least nitrogen and wherein the compound semiconductor comprises optionally at least one further element of main group V which is selected from any of phosphorus and/or arsenic, wherein the method comprises the steps of: introducing a substrate into a vacuum chamber; evacuating the vacuum chamber to a background pressure; heating the substrate to a predefinable temperature; introducing at least one precursor gas into the vacuum chamber, said gas comprising or consisting of nitrogen; introducing at least one precursor comprising an organometallic compound into the vacuum chamber; introducing at least one hydrocarbon co

Abstract: The invention relates to a field-effect transistor and a method for its manufacturing having at least one layer, said layer comprising a III-V compound semiconductor, wherein the compound semiconductor comprises at least one element from the chemical group III being selected from any of gallium, aluminium, indium and/or boron and wherein the compound semiconductor comprises at least one element from the chemical group V being selected from nitrogen, phosphorous and/or arsenic, wherein the compound semiconductor comprises at least nitrogen, wherein the field-effect transistor comprises at least any of a source electrode and/or a drain electrode, said source electrode and/or drain electrode comprising at least one doped region extending from the surface into the at least one layer, wherein the depth of penetration of said doped region is selected from approximately 10 nm to approximately 200 nm.