Patents by Inventor Klaus Sonnenberg

Klaus Sonnenberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device for producing single crystals
    Patent number: 6712904
    Abstract: A device is made available for producing monocrystals, for example large-diameter gallium arsenide monocrystals, that has a cylindrical heating appliance with a floor heater (2) and a cover heater (3). The heating surfaces of the floor and the cover heater are considerably larger than the cross-sectional area of the monocrystal to be produced. In addition, an insulator (6) is planned for the reaction space that is designed to prevent a radial heat flow and the guarantee a strictly axial heat flow over the complete height of the reaction space between the cover heater (3) and the floor heater (2).
    Type: Grant
    Filed: September 19, 2001
    Date of Patent: March 30, 2004
    Assignees: Forschungszentrum Julich GmbH, Frieberger Compound Materials GmbH
    Inventors: Klaus Sonnenberg, Eckhard Küssel, Thomas Bünger, Tilo Flade, Berndt Weinert
  • Method and apparatus for producing monocrystals
    Patent number: 6358315
    Abstract: In a method and an apparatus for producing monocrystals, in particular of gallium arsenide monocrystals, the crystal growth is carried out with a thermal shock resistant nucleus which is freely standing within a nucleus channel and the interspace in the nucleus channel between the nucleus and the crucible is filled with liquid boric oxide.
    Type: Grant
    Filed: March 16, 2000
    Date of Patent: March 19, 2002
    Assignees: Freiberger Compound Materials GmbH, Forschungszentrum Jülich GmbH
    Inventors: Eckhard Küssel, Thomas Bünger, Tilo Flade, Berndt Weinert, Klaus Sonnenberg
  • Method of and apparatus for obtaining fissure-free crystals
    Patent number: 5833748
    Abstract: A process and an apparatus for obtaining unfissured crystals of GaAs after the crystal has been formed by direction solidification from a melt in a quartz crucible. The quartz crucible is immersed in molten potassium hydroxide or sodium hydroxide at a temperature of 450.degree. to 600.degree. C.
    Type: Grant
    Filed: October 29, 1996
    Date of Patent: November 10, 1998
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Martin Althaus, Eckhard Kussel, Klaus Sonnenberg