Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seemless ferromagnetic material surrounding at least a first portion of the conductor.

Abstract: A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

Abstract: A method for making a device including a capacitive structure is disclosed. One embodiment provides a carrier layer having a surface. A first dielectric layer is formed on the surface. A silicon layer including silicon grains is formed on the first dielectric layer using a deposition process. A second dielectric layer is formed on the second silicon layer. A layer of an electrically conductive material is formed on the dielectric layer. A temperature process for heating at least the first dielectric layer is performed. The temperature and duration of the temperature process is selected such that the first dielectric layer is modified so that the silicon layer is electrically connected to the carrier layer.

Abstract: An inductive electrical device according to an embodiment of the present invention including a core structure, wherein the core structure includes a synthetic antiferromagnet is disclosed.

Abstract: An integrated circuit includes two first adjacent magneto-resistive effect (xMR) structures. Each first xMR structure is configured to sense a first magnetic field direction. The integrated circuit includes two second adjacent xMR structures at a distance from the two first xMR structures. Each second xMR structure is configured to sense a second magnetic field direction. The two first xMR structures and the two second xMR structures are configured for in-plane magnetic field components perpendicular to the first magnetic field and the second magnetic field and phase shifted by approximately 90° from the first magnetic field and the second magnetic field acting on the two first xMR structures and the two second xMR structures.

Abstract: A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.