Abstract: This emergency evacuation device includes: an emergency stop requesting unit which detects abnormality from obstacle information acquired from an obstacle information acquisition unit and a roadside information acquisition unit and an occupant physiological state acquired from an occupant state information acquisition unit, and outputs an emergency stop request; a movement permission determination unit which determines movement permission for a mobile object, using the emergency stop request; a movement permission cancellation unit which determines whether or not to cancel movement permission for the mobile object, using a control state of the mobile object acquired from a mobile object state information acquisition unit; and a mobile object control unit which controls movement of the mobile object, using information about movement permission and cancellation of the movement permission.

Abstract: A filter having a plurality of filter pores penetrating one surface and another surface of the filter, wherein the filter pore has a first opening on the one surface and a second opening on the another surface, a ratio (L1/W1) of a major axis diameter L1 to a minor axis diameter W1 of the first opening is 1.00 or more and 1.20 or less, the minor axis diameter W1 is 7.0 ?m or more and 9.0 ?m or less, a ratio (L2/W2) of a major axis diameter L2 to a minor axis diameter W2 of the second opening is 1.00 or more and 1.20 or less, and a ratio (W2/W1) of the minor axis diameter W2 to the minor axis diameter W1 and a ratio (L2/L1) of the major axis diameter L2 to the major axis diameter L1 are both 1.20 or more and 1.50 or less.

Abstract: Apparatuses and methods for manufacturing semiconductor memory devices are described. An example method includes: forming a plurality of capacitor contacts on a substrate; forming a dielectric layer on the plurality of capacitor contacts; removing portions of the dielectric layer to form a plurality of openings in the dielectric layer; exposing the plurality of capacitor contacts at bottoms of the plurality of the corresponding openings; and depositing conductive material to form a plurality of interconnects in the plurality of corresponding openings.

Abstract: Microelectronic devices—having at least one conductive contact structure adjacent a silicide region—are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Abstract: Microelectronic devices—having at least one conductive contact structure adjacent a silicide region—are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Abstract: Microelectronic devices—having at least one conductive contact structure adjacent a silicide region—are formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

Abstract: A charging connector that facilitates a routing operation of an electric cable and is unlikely to cause contact failure between a connection terminal and an electric cable is provided. The charging connector has a housing having socket portions extending along an axial direction, connection terminals accommodated in terminal receptacle portions formed radially inward of the socket portions, and a rotation regulator structure operable to regulate rotation of the connection terminals about their axes with respect to the socket portions. The connection terminal includes a plug connection portion to which a terminal of the charging plug can be connected and a terminal coupling portion located at an opposite side of the plug connection portion in the axial direction. The fixture terminal is coupled to the terminal coupling portion. The rotation regulator structure includes terminal engagement portions formed in the connection terminal and socket engagement portions formed on the socket portions.

Abstract: A charging connector that facilitates a routing operation of an electric cable and is unlikely to cause contact failure between a connection terminal and an electric cable is provided. The charging connector has a housing having socket portions extending along an axial direction, connection terminals accommodated in terminal receptacle portions formed radially inward of the socket portions, and a rotation regulator structure operable to regulate rotation of the connection terminals about their axes with respect to the socket portions. The connection terminal includes a plug connection portion to which a terminal of the charging plug can be connected and a terminal coupling portion located at an opposite side of the plug connection portion in the axial direction. The fixture terminal is coupled to the terminal coupling portion. The rotation regulator structure includes terminal engagement portions formed in the connection terminal and socket engagement portions formed on the socket portions.

Abstract: A charging connector that facilitates a routing operation of an electric cable and is unlikely to cause contact failure between a connection terminal and an electric cable is provided. The charging connector has a housing having socket portions extending along an axial direction, connection terminals accommodated in terminal receptacle portions formed radially inward of the socket portions, and a rotation regulator structure operable to regulate rotation of the connection terminals about their axes with respect to the socket portions. The connection terminal includes a plug connection portion to which a terminal of the charging plug can be connected and a terminal coupling portion located at an opposite side of the plug connection portion in the axial direction. The fixture terminal is coupled to the terminal coupling portion. The rotation regulator structure includes terminal engagement portions formed in the connection terminal and socket engagement portions formed on the socket portions.

Abstract: A compound represented by the following general formula (1) or a salt thereof, which has superior inhibitory activity against type 4 PLA2, and thus has prostaglandin and/or leucotriene production suppressing action [X represents a halogen atom, an alkyl group which may be substituted, or the like, Y represents hydrogen atom or an alkyl group which may be substituted, and Z represents hydrogen atom or an alkyl group which may be substituted].

Abstract: A compound represented by the following general formula (1) or a salt thereof, which has superior inhibitory activity against type 4 PLA2, and thus has prostaglandin and/or leucotriene production suppressing action [X represents a halogen atom, an alkyl group which may be substituted, or the like, Y represents hydrogen atom or an alkyl group which may be substituted, and Z represents hydrogen atom or an alkyl group which may be substituted].

Abstract: A compound represented by the following general formula (1) or a salt thereof, which has superior inhibitory activity against type 4 PLA2, and thus has prostaglandin and/or leucotriene production suppressing action [X represents a halogen atom, an alkyl group which may be substituted, or the like, Y represents hydrogen atom or an alkyl group which may be substituted, and Z represents hydrogen atom or an alkyl group which may be substituted].

Abstract: A compound represented by the following general formula (1) or a salt thereof, which has superior inhibitory activity against type 4 PLA2, and thus has prostaglandin and/or leucotriene production suppressing action [X represents a halogen atom, an alkyl group which may be substituted, or the like, Y represents hydrogen atom or an alkyl group which may be substituted, and Z represents hydrogen atom or an alkyl group which may be substituted].