Abstract: A wavelength cross-connect device performs relay processing, the relay processing being such that wavelength multiplexed signal lights, which are multiband transmitted from a plurality of routes, are demultiplexed into different wavelength bands, and for each route, respective optical signals of the different wavelength bands are amplified, then subject to route change by WSSs and outputted to output side routes M. The device includes C-band WXC units that are the same in total number as the wavelength bands of the optical signals of the respective wavelength bands and perform relay processing on optical signals of a specific wavelength band of the different wavelength bands.

Abstract: Since the coil body of the coil component includes a plurality of coils and the first coil is one of the plurality of coils included in the coil body, the current route from the external terminal of the first to the outer peripheral turn of the second coil portion where stray capacitance occurs is significantly shorter than the route of current flowing between the pair of external terminals, and the voltage drop in the outer peripheral turn of the second coil portion is relatively small, so that stray capacitance between the second coil portion and the first external terminal is small.

Abstract: The coil body of the coil component includes a first coil, a second coil, and a third coil arranged in order along one direction when viewed from the facing direction of the pair of main surfaces of the element body. The first coil, the second coil, and the third coil have alternating winding directions, and the number of turns of the second coil is relatively small, thereby improving the characteristics of the coil component.

Abstract: A surface-treated metal material includes a metal sheet, a plating layer formed on the metal sheet and containing aluminum, magnesium, and zinc, and a composite coating formed on a surface of the plating layer, the composite coating including an organic silicon compound, one or two of a zirconium compound and a titanium compound, a phosphoric acid compound, a fluorine compound, and a vanadium compound, wherein, when a surface of the composite coating is analyzed at a spot size of ?30 ?m using micro-fluorescent X-rays, a maximum value of V/Zn, which is a mass ratio of a V content to a Zn content, is 0.010 to 0.100.

Abstract: In producing a copper concentrate by flotation in which copper minerals are separated from arsenic minerals by using oxoacids of sulfur and oxidants, the arsenic in the copper concentrate is reduced by a simple method. In producing the copper concentrate by the flotation in which an arsenic-containing copper ore is a raw material, the oxoacids of sulfur and hydrogen peroxide as the oxidant are used together as additive reagents, and added in this order.

Abstract: [Problem] To reduce a filter penalty caused by narrowing of an optical signal band due to optical filters having a multiplexing/demultiplexing function in an optical transmission line between transponder units. [Solution] In an optical transmission system 10A, transponder units 21a to 21n and 22a to 22n connected by optical fibers 14 in which optical filters having a multiplexing/demultiplexing function of an optical signal are interposed include a transmission unit 22 that transmits the optical signal obtained by modulating laser light from a laser light source 34 with an electric signal from a communication apparatus to the optical fibers 14, and a reception unit 23 that receives the optical signal from the optical fibers 14 and converts the received optical signal into an electric signal. The reception unit 23 includes a BER measurement unit that measures a BER, based on a received signal, and feeds the measured BER back to a transmitting side.

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

Abstract: A method for producing a semiconductor treatment liquid used for treating a resin having an ether bond, the method comprising: heating a phosphoric acid-containing solution to 100° C. or higher and 400° C. or lower to produce a heated solution; cooling the heated solution to 5° C. or higher and 95° C. or lower to produce a cooled solution; and mixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution.

Abstract: A mammography apparatus includes: an arm; a first cooling fan that is disposed on a stand side with respect to the radiation source in the arm, sucks air from an outside of the arm, and discharges air that has cooled the radiation source from a first exhaust port provided on the stand side with respect to the radiation source; a projector that is disposed in the arm; a second cooling fan that is disposed between the projector and the first exhaust port in the arm, sucks a part of air directed from the first cooling fan to the first exhaust port, blows the sucked air toward the projector to cool the projector, and has a flow rate smaller than that of the first cooling fan; and a second exhaust port that is provided separately from the first exhaust port and through which air that has cooled the projector is discharged.

Abstract: A mammography apparatus includes an imaging table; a radiation source; a stand; the compression plate including a bottom plate that compresses the breast and side plates provided on at least two locations of a subject side and a stand side of the bottom plate; and a projector that projects an image toward the compression plate and the imaging table, in which in a case where an intersection between an imaginary plane formed by extending the inner wall surface toward the projector and an imaginary horizontal line crossing the projector in a horizontal direction is defined as an imaginary intersection, an optical element closest to the compression plate on an optical path directed from the projector to the compression plate is located on the subject side with respect to the imaginary intersection.

Abstract: A mammography apparatus includes: an imaging table; a radiation source; a compression plate that compresses the breast and is movable between the radiation source and the imaging table; a projector that includes a display displaying an image including first information projected onto a first surface facing the radiation source on the imaging table and second information projected onto a second surface facing the radiation source on the compression plate, and a projection optical system, in which a focus of the projection optical system is adjusted in accordance with a projection distance to the first surface; and a processor that is configured to control the display and change at least one of a display size or a display position of the second information in the image on an image display surface of the display in accordance with movement of the compression plate having the second surface independently of the first information.

Abstract: A mammography apparatus includes an arm; and a stand, the arm is provided with a drive mechanism including a motor that rotationally drives the radiation source holding portion, and a first restriction mechanism that restricts rotation of the imaging table about the axis of the support shaft, the first restriction mechanism is disposed on a side opposite to a radiation source with respect to the support shaft, and the drive mechanism is disposed on a radiation source side with respect to the first restriction mechanism and in a case where a center line of the arm extending in a direction connecting the radiation source and a center of the support shaft is assumed, the drive mechanism is disposed so as to intersect the center line.

Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.

Abstract: A cyclic wavelength band permutation device (31) includes as many wavelength band converters (32a to 32c) as the wavelength bands of optical signals (S1, C1, and L1), and the wavelength band converters are individually connected to the output terminals of corresponding optical amplifiers among a plurality of optical amplifiers (17a to 17c) connected to an optical fiber (16) in an inserted manner. When a wavelength-multiplexed signal beam obtained by multiplexing optical signals in different wavelength bands is multiband-transmitted through an optical fiber while being amplified by the plurality of optical amplifiers, each wavelength band converter performs a cyclic permutation process of transitioning or converting an optical signal allocated to the shorter wavelength band side in the bands of the optical fiber to the longer wavelength band side, and also transitioning or converting an optical signal allocated to the longest wavelength band to the shortest wavelength band.

Abstract: A lithium primary battery includes a positive electrode, a negative electrode, and a non-aqueous electrolyte. The positive electrode contains a positive electrode material mixture that contains LixMnO2 (0?x?0.05). The negative electrode contains at least one of metal lithium and a lithium alloy. The non-aqueous electrolyte contains at least one of a cyclic imide component and a parole component as a first component and an oxalate phosphate complex component as a second component. The concentration of the first component in the non-aqueous electrolyte is 1 mass % or less. The concentration of the second component in the non-aqueous electrolyte is 6 mass % or less. The mass ratio of the first component relative to the second component in the non-aqueous electrolyte is 0.02 or more and 10 or less.

Abstract: A wavelength cross-connect device performs a relay process in which multiple wavelength signal light beams that have been transmitted in multiple bands from a plurality of paths and demultiplexed into optical signals in the respective wavelength bands for each path are amplified, are switched to paths by contention WSSs, and are output to paths on the output side. A WXC unit performs the relay process on an optical signal in a specific wavelength band An input-side conversion unit that converts a wavelength band other than the specific wavelength band into the specific wavelength band is provided on the input side, and an output-side conversion unit that converts the specific wavelength band after the conversion into the wavelength band prior to the conversion is provided on the output side. A directly-input optical signal in the specific wavelength band is directly output after the relay process at the WXC unit.

Abstract: A wavelength cross-connect device is formed by connecting a plurality of wavelength cross-connect devices in a ring-like form with WDM networks for each band of a plurality of bands on the input/output sides of the wavelength cross-connect devices, and includes a link wavelength allocation control unit. The link wavelength allocation control unit performs control to set different optical paths through which optical signals of the same wavelength are transmitted in the same zone between wavelength cross-connect devices, in the WDM networks of different bands in the same zone.

Abstract: This positive electrode includes: a positive electrode current collector; a positive electrode mixed material layer that is formed on at least one surface of the positive electrode current collector; and a protective layer which includes an insulating inorganic compound and a conductive material, and is interposed between the positive electrode current collector and the positive electrode mixed material layer. The protective layer includes secondary particles comprising agglomerated primary particles of the inorganic compound. The median value of the particle size of the secondary particles is 30 ?m or less.

Abstract: Provided is an optical transmission system that includes: a transponder having a transmitter and a receiver; a loopback path that directly couples a signal of the transmitter to the receiver; and a server that calculates, based on a signal transmitted using the loopback path, a compensation value to compensate for frequency characteristics of a signal transmitted from the transmitter.

Abstract: An optical node device (1aA to 1cA) includes a transmission transponder (27), WSSs (22 to 25), a beam splitter (21), and a monitoring transponder (26). The transmission transponder (27) transmits an optical signal (B1) via an optical path (P3) set in an optical fiber (2). The WSSs (22 to 25) multiplex, on the transmitted optical signal (B1), a monitoring control signal (M1) for performing optical path tracing that is confirmation of conduction along the optical path (P3). The monitoring transponder (26) measures and monitors the optical power of the monitoring control signal (M1) multiplexed into the optical signal (B1) branched by the beam splitter (21), and further monitors whether the monitored optical power is equal to or higher than a predetermined level indicating normality of the optical path (P3).