Abstract: A semiconductor device includes a chip and an electrode that has a laminated structure including a Ti film, a TiN film, a TiAl alloy film and an Al-based metal film that are laminated in that order from the chip side.

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer po

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer po

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer po

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer po

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer po

Abstract: A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically

Abstract: A method of manufacturing a semiconductor device includes: forming a lattice defect layer in a substrate having a front surface region where a bipolar element of a pn junction type is formed and a rear surface region opposing the front surface region, the lattice defect layer being formed by injecting a charged particle to a first region in the rear surface region of the substrate; forming a laminated region, in which a first conductivity type impurity region and a second conductivity type impurity region are sequentially laminated from a rear surface side of the substrate toward the first region, in a second region in the rear surface region of the substrate, the first region being positioned deeper than the second region from a rear surface of the substrate; and selectively activating the laminated region by laser annealing after the formation of the laminated region and the lattice defect layer.

Abstract: A method of manufacturing a semiconductor device includes: forming a lattice defect layer in a substrate having a front surface region where a bipolar element of a pn junction type is formed and a rear surface region opposing the front surface region, the lattice defect layer being formed by injecting a charged particle to a first region in the rear surface region of the substrate; forming a laminated region, in which a first conductivity type impurity region and a second conductivity type impurity region are sequentially laminated from a rear surface side of the substrate toward the first region, in a second region in the rear surface region of the substrate, the first region being positioned deeper than the second region from a rear surface of the substrate; and selectively activating the laminated region by laser annealing after the formation of the laminated region and the lattice defect layer.