Patents by Inventor Kohetsu Tanno

Kohetsu Tanno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4637127
    Abstract: A method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. The layers are grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride and a carrier gas flow in a chamber under reduced pressure. The layers are used for semiconductors device formation.
    Type: Grant
    Filed: July 6, 1982
    Date of Patent: January 20, 1987
    Assignee: Nippon Electric Co., Ltd.
    Inventors: Yukinori Kurogi, Nobuhiro Endo, Kohetsu Tanno