Abstract: A direct backlight includes a substrate having a plurality of light sources provided thereon; an optical member being provided at such a position as to face the light sources; and a supporting pole, fixed in between each adjacent two of the light sources on the substrate, for supporting the optical member, the supporting pole having light transparency, the supporting pole including two surfaces at least some region of which are mirror-finished and which respectively face the each adjacent two of the light sources.

Abstract: The objective is to realize a semiconductor memory capable of avoiding an increase in the load of the sense amplifiers, easily realizing a large capacity and high integration of the memory, reducing the current consumption by the bit lines, and improving the access speed. Because the levels of the selection signal lines SHUS1, SHUE1, SHDS1, and SHDE1 are set by the control circuit, only one of the aforementioned four selection signal lines is selected at the time of memory access, other selection signal lines are held in unselect status, and the sense amplifiers in the sense amplifier bank SB1a and prescribed bit line pairs or extended bit line pairs are connected to each other by response in order to carry out read or write; thus, the load of the sense amplifiers can be reduced, and high speed, large capacity, and high integration can be achieved.