Abstract: The information processing apparatus includes a display. The information processing apparatus accepts user operations via a GUI (graphical user interface) displayed on the display. When the service ends, the forgotten item notification screen is displayed on the display. In the forgotten item notification screen, a forgotten item reminder unit is provided for reminding a user who left behind a reminder target item, including the property of the user used in connection with the service. An individual reminder section is provided in a forgotten item reminder unit, to give an individual reminder to prevent the occurrence of leaving behind of each reminder target item, for a first-type item for which retrieval cannot be detected and a second-type item for which retrieval can be detected but which has not been retrieved, from among the reminder target items.

Abstract: The information processing apparatus includes a display. The information processing apparatus accepts user operations via a GUI (graphical user interface) displayed on the display. The operation screen is displayed on the display. On the operation screen, an operation guidance portion, including a message for providing operation guidance to the user, and a plurality of operation keys for accepting user operations are displayed. A part of the operation guidance portion is colored in a first color, the operation keys which are the first type of operation key are colored in the first color, and the operation keys which are the second type of operation key are not colored in the first color.

Abstract: In accordance with one aspect of the present invention, provided is a semiconductor device comprising a semiconductor chip which is directly covered with a resin material having a light shielding property as well as a film which is provided on the resin material for shielding the semiconductor device against light. The film may be formed by a seal having a surface which is covered with a metal and a rear surface which is colored black, a layer of a metal or ceramics which is deposited in a vapor phase, or a coating of an insulating material whose refractive index is different from that of the resin material. In another aspect of the present invention, provided is a semiconductor device which is directly covered with a resin material mixed with a light absorbing material.

Abstract: Provided is a semiconductor device comprising a semiconductor chip which is directly covered with a resin material having a light shielding property as well as a film which is provided on the resin material for shielding the semiconductor device against light. The film may be formed by a seal having a surface which is covered with a metal and a rear surface which is colored black, a layer of a metal or ceramics which is deposited in a vapor phase, or a coating of an insulating material whose refractive index is different from that of the resin material. In another aspect of the present invention, provided is a semiconductor device which is directly covered with a resin material mixed with a light absorbing material. In still another aspect of the present invention, provided is a semiconductor device comprising a semiconductor chip, having a surface covered with black polyimide, which is further covered with a resin material having a light shielding property.

Abstract: In a cache DRAM including a DRAM memory array and a SRAM memory array provided on the same chip, a plurality of pairs of MOS transistors are provided, as block transfer gates, so as to connect bit line pairs in the DRAM memory array and bit line pairs in the SRAM memory array one pair by one pair, and a data transfer amount controlling circuit for controlling the plurality of pairs of MOS transistors, a block including a predetermined number of pairs at a time, is newly provided. Data transfer amount controlling circuit is constructed to simultaneously turn on only pairs of MOS transistors included in blocks of a number in accordance with a predetermined external signal out of the plurality of pairs of MOS transistors. Therefore, the amount of data transferred at a time between the DRAM memory array and the SRAM memory array can be changed by changing the combination of the logical levels of external signals.