Patents by Inventor Kohsuke Tsuchiya
Kohsuke Tsuchiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10351732Abstract: Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.Type: GrantFiled: March 14, 2014Date of Patent: July 16, 2019Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Hisanori Tansho, Taiki Ichitsubo
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Patent number: 10344185Abstract: Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight MA of the amido group-containing polymer A and molecular weight MB of the organic compound B have a relation satisfying 200?MB<MA.Type: GrantFiled: June 17, 2015Date of Patent: July 9, 2019Assignee: Fujimi IncorporatedInventors: Kohsuke Tsuchiya, Hisanori Tansho, Yusuke Suga
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Publication number: 20190189460Abstract: There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×1010 particles/mL or more and 1.0×1013 particles/mL or less by calculating from (1 [mL]×specific gravity of the composition [g/mL]×concentration of the abrasives [wt %])/((4/3)?×(average secondary particle diameter×10?7 [cm]/2)3 [/particle]×specific gravity of the abrasives [g/cm3]), using concentration of the abrasives in the surface treatment composition and an average secondary particle diameter measured by dynamic light scattering method, provided that all of the abrasives in the surface treatment composition used in the surface treatment step are assumed to have the average secondary particle diameter.Type: ApplicationFiled: February 26, 2019Publication date: June 20, 2019Applicant: FUJIMI INCORPORATEDInventor: Kohsuke TSUCHIYA
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Patent number: 10273383Abstract: To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.Type: GrantFiled: January 22, 2016Date of Patent: April 30, 2019Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Satoshi Momota
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Publication number: 20190077992Abstract: Provided are polishing compositions comprising a water-soluble polymer and water. The water-soluble polymer of an embodiment has a repeat unit that does not have any hydroxyl groups, and the water-soluble polymer has a hydroxyl group content in a range of 4 mmol/g or higher and 21 mmol/g or lower. The water-soluble polymer of another embodiment has a repeat unit A that has a hydroxyl group and a repeat unit B, and the number of moles of the repeat unit B in the total number of moles of all the repeat units of the water-soluble polymer is 5% or greater.Type: ApplicationFiled: November 9, 2018Publication date: March 14, 2019Inventors: Kohsuke TSUCHIYA, Hisanori TANSHO, Taiki ICHITSUBO
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Patent number: 10227518Abstract: Provided is a polishing composition with which surface defects can be efficiently reduced. This invention provides a polishing composition comprising a water-soluble polymer MC-end. The main chain of the water-soluble polymer MC-end is formed with a non-cationic region as its main structural part and a cationic region located at least at one end of the main chain. The cationic region has at least one cationic group.Type: GrantFiled: September 22, 2014Date of Patent: March 12, 2019Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Yoshio Mori
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Publication number: 20190062595Abstract: The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.Type: ApplicationFiled: February 8, 2017Publication date: February 28, 2019Applicant: FUJIMI INCORPORATEDInventors: Megumi TANIGUCHI, Kohsuke TSUCHIYA, Maki ASADA, Taiki ICHITSUBO, Hisanori TANSHO
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Publication number: 20190015947Abstract: To provide a polishing composition capable of realizing a polished surface having smoothness and few defects. A polishing composition contains a water-soluble polymer satisfying the following two conditions (A) and (B): Condition (A): in a first standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.0, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the first standard solution is 10% or more; and Condition (B): in a second standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.Type: ApplicationFiled: December 16, 2016Publication date: January 17, 2019Applicant: FUJIMI INCORPORATEDInventors: Kohsuke TSUCHIYA, Taiki ICHITSUBO, Hisanori TANSHO, Yusuke SUGA
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Patent number: 9944838Abstract: Provided is a polishing composition with which haze and surface defects can be reduced. This invention provides a polishing composition comprising a synthetic water-soluble polymer ML-end that has a hydrophobic region at least at one end of its main chain. The hydrophobic region has at least one hydrophobic group derived from a polymerization initiator.Type: GrantFiled: September 22, 2014Date of Patent: April 17, 2018Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Yoshio Mori
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Publication number: 20180066161Abstract: To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.Type: ApplicationFiled: January 22, 2016Publication date: March 8, 2018Applicant: FUJIMI INCORPORATEDInventors: Kohsuke TSUCHIYA, Satoshi MOMOTA
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Publication number: 20180030313Abstract: There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×1010 particles/mL or more and 1.0×1013 particles/mL or less.Type: ApplicationFiled: January 22, 2016Publication date: February 1, 2018Applicant: FUJIMI INCORPORATEDInventor: Kohsuke TSUCHIYA
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Publication number: 20170253767Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.Type: ApplicationFiled: May 23, 2017Publication date: September 7, 2017Applicants: FUJIMI INCORPORATED, TOAGOSEI CO., LTD.Inventors: Kohsuke TSUCHIYA, Hisanori TANSHO, Taiki ICHITSUBO, Yoshio MORI
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Patent number: 9685341Abstract: The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least ?100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.Type: GrantFiled: March 12, 2013Date of Patent: June 20, 2017Assignee: FUJIMI INCORPORATEDInventors: Yoshio Mori, Kohsuke Tsuchiya, Maki Asada, Shuhei Takahashi
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Patent number: 9650544Abstract: A polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed on the silicon dioxide. The adsorbate is contained in a concentration of 4 ppm by mass or more in terms of carbon. A percentage of the concentration of the adsorbate in terms of carbon relative to a total carbon concentration in the polishing composition is 15% or more.Type: GrantFiled: August 12, 2013Date of Patent: May 16, 2017Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Maki Asada
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Publication number: 20170081554Abstract: Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight MA of the amido group-containing polymer A and molecular weight MB of the organic compound B have a relation satisfying 200?MB<MA.Type: ApplicationFiled: June 17, 2015Publication date: March 23, 2017Applicant: FUJIMI INCORPORATEDInventors: Kohsuke TSUCHIYA, Hisanori TANSHO, Yusuke SUGA
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Patent number: 9579769Abstract: Provided is a polishing composition, which comprises abrasive grains, a water-soluble polymer, an aggregation inhibitor and water. The ratio R1/R2 is 1.3 or less, where R1 represents the average particle diameter of the particles present in the polishing composition and R2 represents the average particle diameter of the abrasive grains when the abrasive grains are dispersed in water at the same concentration as that of the abrasive grains in the polishing composition. The polishing composition can be used mainly for polishing the surface of a silicon substrate.Type: GrantFiled: October 9, 2012Date of Patent: February 28, 2017Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Yoshio Mori, Shinichiro Takami, Shuhei Takahashi
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Patent number: 9566685Abstract: This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.Type: GrantFiled: February 14, 2014Date of Patent: February 14, 2017Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Hisanori Tansho
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Patent number: 9505950Abstract: A polishing composition includes a water-soluble polymer having a weight average molecular weight of 1000000 or less and a molecular weight distribution represented by weight average molecular weight (Mw)/number average molecular weight (Mn) that is less than 5.0. The polishing composition is mainly used in an application for polishing a substrate, preferably in an application for performing final polishing on a substrate.Type: GrantFiled: August 12, 2013Date of Patent: November 29, 2016Assignee: FUJIMI INCORPORATEDInventors: Kohsuke Tsuchiya, Shuhei Takahashi
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Publication number: 20160272846Abstract: Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.Type: ApplicationFiled: March 14, 2014Publication date: September 22, 2016Applicant: FUJIMI INCORPORATEDInventors: Kohsuke TSUCHIYA, Hisanori TANSHO, Taiki ICHITSUBO
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Publication number: 20160215188Abstract: Provided is a polishing composition with which haze and surface defects can be reduced. This invention provides a polishing composition comprising a synthetic water-soluble polymer ML-end that has a hydrophobic region at least at one end of its main chain. The hydrophobic region has at least one hydrophobic group derived from a polymerization initiator.Type: ApplicationFiled: September 22, 2014Publication date: July 28, 2016Applicant: FUJIMI INCORPORATEDInventors: Kohsuke TSUCHIYA, Yoshio MORI