Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

Abstract: A method for manufacturing a light-emitting device includes providing a light-emitting element having element electrodes including a positive element electrode and a negative element electrode, a wiring substrate having wiring layers, and conductive members each electrically connecting one of the element electrodes and a corresponding one of the wiring layers, with at least one member of the element electrodes, the wiring layers, or the conductive members containing Au; arranging, between a lower surface of the light-emitting element and the wiring substrate, a resin composition in a liquid state; oxidizing a component B in the resin composition in contact with the at least one member containing Au; and after the oxidizing of the component B, heating and curing the resin composition not in contact with the at least one member containing Au.

Abstract: A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

Abstract: A liquid crystal display device according to the present disclosure includes: a liquid crystal unit including a pixel electrode, a counter electrode facing the pixel electrode, and a liquid crystal layer sealed between the pixel electrode and the counter electrode; a first writing circuit configured to write a positive polarity video signal among video signals whose polarity changes periodically; and a second writing circuit configured to write a negative polarity video signal among the video signals whose polarity changes periodically. The liquid crystal unit, the first writing circuit, and the second writing circuit are provided for each pixel. The first writing circuit and the second writing circuit include transistors having conductivity types different from each other.

Abstract: It is an object of the present disclosure to dispose an optical element on a lower surface side of transistors without being influenced by heat treatment in a transistor forming process such that peeling, displacement, and the like do not easily occur. A transistor array substrate includes: a first substrate (110) including transistors (113) arranged in an array; and a second substrate (120) including an optical element (122), in which the transistors are arranged on a front surface side of the first substrate, and the second substrate is bonded to a back surface of the first substrate by plasma bonding treatment.

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: An electrode structure includes a light reflection film, an insulating film formed on the light reflection film, and a transparent conductive film formed on the insulating film. The transparent conductive film is divided into pieces in a two-dimensional matrix at a predetermined pitch to form transparent pixel electrodes. Each of the transparent pixel electrodes is connected to a corresponding one of drive electrodes formed in a lower layer underlying the light reflection film, through a corresponding one of vias penetrating the insulating film and the light reflection film and insulated from the light reflection film.

Abstract: A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

Abstract: An electrode structure includes a light reflection film, an insulating film formed on the light reflection film, and a transparent conductive film formed on the insulating film. The transparent conductive film is divided into pieces in a two-dimensional matrix at a predetermined pitch to form transparent pixel electrodes. Each of the transparent pixel electrodes is connected to a corresponding one of drive electrodes formed in a lower layer underlying the light reflection film, through a corresponding one of vias penetrating the insulating film and the light reflection film and insulated from the light reflection film.

Abstract: A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

Abstract: A liquid crystal display device according to the present disclosure includes: a liquid crystal unit including a pixel electrode, a counter electrode facing the pixel electrode, and a liquid crystal layer sealed between the pixel electrode and the counter electrode; a first writing circuit configured to write a positive polarity video signal among video signals whose polarity changes periodically; and a second writing circuit configured to write a negative polarity video signal among the video signals whose polarity changes periodically. The liquid crystal unit, the first writing circuit, and the second writing circuit are provided for each pixel. The first writing circuit and the second writing circuit include transistors having conductivity types different from each other.

Abstract: [Object] To provide a display device, a method for producing a display device, and a display apparatus of projection type, which are capable of suppressing deterioration of image quality attributable to a depressed space between pixel electrodes. [Solving Means] A display device of the present disclosure includes pixel electrodes formed for individual pixels and an insulating film for insulation between the pixel electrodes. The insulating film is so formed as to protrude from an electrode surface between the pixel electrodes. A display apparatus of projection type of the present disclosure uses the display device of the present disclosure as a light modulator to module light from a light source. A method for producing a display device of the present disclosure having pixel electrodes formed for individual pixels and an insulating film for insulation between the pixel electrodes includes forming the insulating film as to protrude between the pixel electrodes.

Abstract: A light-emitting device includes a light-emitting element having a light-emitting surface, and a plurality of protruding portions being separated from each other and disposed on the light-emitting surface. The protruding portions are transparent. Each of the protruding portions includes a light guide portion and a light distribution control portion. The light guide portion has a columnar configuration and is provided at a light-emitting surface side of the protruding portion. The light distribution control portion is provided on the light guide portion. The light distribution control portion is asymmetric with respect to a central axis of the light guide portion and has a tilted surface that is tilted with respect to the central axis.

Abstract: There is provided a liquid crystal display device that includes a first substrate including a plurality of wiring layers and having a plurality of first electrodes on one surface of the first substrate, a second substrate provided to face the first substrate and having a second electrode facing the first electrodes, and a liquid crystal layer sealed between the first substrate and the second substrate, wherein a thickness in a peripheral portion in a plane of the first substrate is larger than a thickness in a central portion.

Abstract: A liquid crystal display unit of the present disclosure has a liquid crystal panel having a pixel region including a plurality of pixels, and the liquid crystal panel includes: a first substrate on which a plurality of pixel electrodes having light reflectivity are provided for each of the pixels; a second substrate disposed in opposition to the first substrate; a liquid crystal layer disposed between the first substrate and the second substrate; and an interlayer film provided between the first substrate and the liquid crystal layer, and the interlayer film has a plurality of sloped sections each including at least a portion facing a corresponding one of the plurality of pixel electrodes, and the plurality of sloped sections each have a slope width that faces the corresponding one of the plurality of pixel electrodes and that differs from one another.

Abstract: A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

Abstract: A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.

Abstract: A thin film transistor includes a gate electrode, an insulation film disposed on the gate electrode, a semiconductor layer facing the gate electrode with the insulation film in between, and a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer. The first wiring layer is in contact with the semiconductor layer between the semiconductor layer and the insulation film, and is configured of a transparent electroconductive film. The second wiring layer is overlapped with a portion of the first wiring layer. Another semiconductor layer made of a material same as a material of the semiconductor layer is stacked on the second wiring layer.

Abstract: There is provided a liquid crystal display device including: a first substrate including a plurality of wiring layers and having a plurality of first electrodes on one surface of the first substrate; a second substrate provided to face the first substrate and having a second electrode facing the first electrodes; and a liquid crystal layer sealed between the first substrate and the second substrate, wherein a thickness in a peripheral portion in a plane of the first substrate is larger than a thickness in a central portion.