Abstract: The near-infrared absorbing glass includes four or more kinds of the prescribed main cations, and includes P ions, Ba ions and Cu ions as essential cations, wherein, in a glass composition expressed in anion %, the content of O ions is 90.0 anion % or more, in a glass composition expressed in atomic %, the ratio of the content of O ions to the content of P ions is 3.15 or less, in a glass composition expressed in mol % based on oxides, the total content of B2O3 and SiO2 is 3.0 mol % or less, the total content of MgO and Al2O3 is 8.0 mol % or less, and the total content of Li2O, Na2O and K2O is 15 mol % or less.

Abstract: A mental illness determination device includes a face change information acquisition unit and a mental illness determination unit. The face change information acquisition unit is configured to acquire face change information indicating a time-series change in face data of a subject when emotional stimulation information for stimulating any sense or any combination of senses among an auditory sense, an olfactory sense, a gustatory sense, a tactile sense, and a somatic sensation of the subject to change emotion, and is divided into positive information for increasing comfort and negative information for decreasing comfort is provided to the subject. The mental illness determination unit is configured to determine a state of mental illness of the subject on the basis of the face change information.

Abstract: A semiconductor device includes insulating substrate; a compound semiconductor layer provided in a first region of a surface of the insulating substrate; and a silicon layer provided in a second region, differing from the first region, of the surface of the insulating substrate. The semiconductor device further includes: a first gate electrode provided on a surface of the compound semiconductor layer; a pair of conductive members provided at positions on the surface of the compound semiconductor layer to sandwich the first gate electrode between the pair of conductive members; a second gate electrode provided on a surface of the silicon layer; and a pair of diffusion layers provided at positions in the silicon layer to sandwich the second gate electrode between the pair of diffusion layers. One of the conductive members is electrically connected to one of the diffusion layers.

Abstract: A semiconductor device having reduced size, and a manufacturing method of the semiconductor device, where the semiconductor device has a silicon layer provided in a first region on a sapphire substrate, and a silicon device formed on the silicon layer. An oxide semiconductor layer is provided in a second region on the sapphire substrate, and an oxide semiconductor device is formed in the oxide semiconductor layer. The silicon device is connected to the oxide semiconductor device by plural wiring lines formed in a wiring line layer.

Abstract: A mental illness determination device includes a face change information acquisition unit and a mental illness determination unit. The face change information acquisition unit is configured to acquire face change information indicating a time-series change in face data of a subject when emotional stimulation information for stimulating any sense or any combination of senses among an auditory sense, an olfactory sense, a gustatory sense, a tactile sense, and a somatic sensation of the subject to change emotion, and is divided into positive information for increasing comfort and negative information for decreasing comfort is provided to the subject. The mental illness determination unit is configured to determine a state of mental illness of the subject on the basis of the face change information.

Abstract: A semiconductor device includes insulating substrate; a compound semiconductor layer provided in a first region of a surface of the insulating substrate; and a silicon layer provided in a second region, differing from the first region, of the surface of the insulating substrate. The semiconductor device further includes: a first gate electrode provided on a surface of the compound semiconductor layer; a pair of conductive members provided at positions on the surface of the compound semiconductor layer to sandwich the first gate electrode between the pair of conductive members; a second gate electrode provided on a surface of the silicon layer; and a pair of diffusion layers provided at positions in the silicon layer to sandwich the second gate electrode between the pair of diffusion layers. One of the conductive members is electrically connected to one of the diffusion layers.

Abstract: The present disclosure provides a semiconductor device that may reduce the size of the semiconductor device and a manufacturing method thereof. A silicon layer is provided in a first region of on a sapphire substrate, and a silicon device is formed on the silicon layer. An oxide semiconductor layer is provided in a second region on the sapphire substrate, and an oxide semiconductor device is formed in the oxide semiconductor layer. The silicon device is connected to the oxide semiconductor device by plural wiring lines formed in a wiring line layer.

Abstract: A server/client system provides packet communications between a server and a client by way of a network such as the Internet. The server inputs data such as MIDI data in a sporadic manner while storing timing data representing their input timings. Then, the server performs packetizing of the sporadically input data, which accompany the timing data and are subjected to transmission to the client. The client receives the packetized input data and then outputs them at timings based on the timing data. Thus, it is possible to completely secure the same time relationship of data during transmission and reception of the sporadically input data even though the client differs from the server on a time-axis basis.

Abstract: A steel having excellent formability, fatigue endurance after quenching, low temperature toughness, resistance for hydrogen embrittlement, and corrosion fatigue endurance. A method includes heating a steel slab at 1160° C. to 1320° C., hot-finish-rolling the steel slab at a finisher delivery temperature of 750° C. to 980° C., and then coiling the hot-rolled steel at a coiling temperature of 560° C. to 740° C. after slow cooling for a time of 2 seconds or more to produce a hot-rolled steel strip having a structure in which the ferrite grain diameter df corresponding to a circle is 1.1 ?m to less than 1.2 ?m and the ferrite volume fraction Vf is 30% to 98%, the steel slab containing 0.18 to 0.29% of C, 0.06 to 0.45% of Si, 0.91 to 1.85% of Mn, 0.019% or less of P, 0.0029% or less of S, 0.015 to 0.075% of sol. Al, 0.0049% or less of N, 0.0049% or less of O, 0.0001 to 0.0029% of B, 0.001 to 0.019% of Nb, 0.001 to 0.029% of Ti, 0.001 to 0.195% of Cr, and 0.001 to 0.

Abstract: In a plasma display apparatus, a back face of a flat type Plasma Display Panel (hereinafter, referred as PDP) is fixed to a chassis member by at least one of adhesive tapes including a double-sided adhesive tape and a single-sided adhesive tape. In the double-sided adhesive tape and the single-sided adhesive tape, a total area of the adhesive surface of the double-sided adhesive tape is adjusted to adjust a bonding strength between the PDP and the chassis member to a predetermined value, and also to ensure a contact area for heat conduction.

Abstract: A drive circuit board 11 is mounted on a side portion of a chassis 10 in a position forming an angle with a flat display panel 1. A wiring board 13 has two flections 13DA, 13DB formed in two positions. The wiring board 13 is placed in a front corner of the flat display apparatus and between the flat display panel 1 and the drive circuit board 11, which are placed at angles on the chassis 10, in such a way that electrode terminals 13B and 13C are respectively connected to the flat display panel 1 and the drive circuit board 11, and a board body 13A is bent by the flections 13DA, 13DB, provided in the two positions, in the direction of projecting toward the front of the flat display panel 1.

Abstract: A display apparatus includes: a display panel; a chassis attached to a back face of the display panel; a first sheet having first thermal conductivity which is interposed in a first region between the chassis and the display panel; and a second sheet having second thermal conductivity higher than the first thermal conductivity the second sheet interposed in a second region between the chassis and the display panel.

Abstract: A roller is equipped with a pair of crawlers. Each crawler includes a driving wheel detachably attached to a driving shaft. Each crawler also includes a set of driven wheels. Both sets of driven wheels are supported by a connecting member that is detachably attached on a bottom of a body. A roll, which is vibrated only in the perpendicular direction with respect to the ground surface, is attached to the body.

Abstract: In a plasma display apparatus, a back face of a flat type Plasma Display Panel (hereinafter, referred as PDP) is fixed to a chassis member by at least one of adhesive tapes including a double-sided adhesive tape and a single-sided adhesive tape. In the double-sided adhesive tape and the single-sided adhesive tape, a total area of the adhesive surface of the double-sided adhesive tape is adjusted to adjust a bonding strength between the PDP and the chassis member to a predetermined value, and also to ensure a contact area for heat conduction.

Abstract: In a plasma display panel device including a plasma display panel and a drive circuit for driving the plasma display panel, a plurality of circuit boards (4, 13) are provided, and electronic components (E1′, E1″, E2′) making up the drive circuit are mounted separately on the plurality of circuit boards (4, 13).

Abstract: A cobalt layer is formed over an entire surface including over a device isolation region. Silicon ions are selectively implanted into only the cobalt layer on the device isolation region and thereafter a silicidation reaction is done, whereby local interconnects are formed between source and drain regions of adjacent MOS transistors.

Abstract: A drive circuit board 11 is mounted on a side portion of a chassis 10 in a position forming an angle with a flat display panel 1. A wiring board 13 has two flections 13DA, 13DB formed in two positions. The wiring board 13 is placed in a front corner of the flat display apparatus and between the flat display panel 1 and the drive circuit board 11, which are placed at angles on the chassis 10, in such a way that electrode terminals 13B and 13C are respectively connected to the flat display panel 1 and the drive circuit board 11, and a board body 13A is bent by the flections 13DA, 13DB, provided in the two positions, in the direction of projecting toward the front of the flat display panel 1.

Abstract: A plasma display apparatus includes a plasma display panel, a circuit board mounting a drive circuit for driving the plasma display panel, a chassis structure provided on the backside of the plasma display panel for supporting the plasma display panel and for mounting the circuit board. In particular, the chassis structure comprises a first chassis member mounting the circuit board, and a second chassis member fixed on the backside of the plasma display panel, a plurality of support portions provided between the first and second chassis members for supporting the two chassis members and for forming a predetermined interval between the two chassis members.

Abstract: A display panel of the display apparatus is encompassed by a front case from the front and by a rear case from the back. The display apparatus includes a first attachment structure capable of attaching/detaching the front case on the front side, and a second attachment structure A formed on the four corners of the rear case for attaching the display apparatus to the wall. The attachment operation for attaching the display apparatus to the wall is performed while the front case is detached. After the completion of attaching the display apparatus on the wall, the front case is attached by way of the first attachment structure to prevent the second attachment structure A from being exposed to the front.

Abstract: In the information providing system, when providing environmental impact data, a server of an information provider requests a user ID and a password from an information requestor, and compares a user ID and a password transmitted from a computer of the information requestor with previously stored user ID and password to verify the information requestor as an authorized requestor. After the verification, the server displays a plurality of environmental impact calculation programs and output forms, and provides environmental impact data by using an environmental impact calculation program and an output form selected by the requestor.