Patents by Inventor Koichi Orito
Koichi Orito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11800583Abstract: A communication system includes a first device and a plurality of second devices, and each of the second devices includes a pairing processing unit, a device information storage unit, and a data control unit. The pairing processing unit performs a pairing process including an authentication process with the first device by using device-specific information of the second device. The device information storage unit stores device information including pairing authentication information. The pairing processing unit performs, by using device-specific information of another second device the pairing process between the first device and the another second device, and stores the pairing authentication information in the device information storage unit. The data control unit transmits the pairing authentication information to the another second device. The data control unit of the another second device stores the received pairing authentication information in the device information storage unit.Type: GrantFiled: June 9, 2021Date of Patent: October 24, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventor: Koichi Orito
-
Patent number: 11789539Abstract: A display includes: a monitor that includes an input/output region and performs haptic feedback when detecting an input from an operator while an image is displayed, the input/output region being obtained by superimposing a first region for displaying an image, a second region including a plurality of input detection regions each for detecting an input from an operator, and a third region including a plurality of haptic feedback regions each for performing haptic feedback to the operator; and a data processor that determines a haptic output value in each of the plurality of haptic feedback regions on the basis of image data of an image being displayed on the first region and a detection result of an input from an operator in each of the plurality of input detection regions.Type: GrantFiled: May 29, 2020Date of Patent: October 17, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventor: Koichi Orito
-
Publication number: 20230319912Abstract: A communication system includes a first device and a plurality of second devices, and each of the second devices includes a pairing processing unit, a device information storage unit, and a data control unit. The pairing processing unit performs a pairing process including an authentication process with the first device by using device-specific information of the second device. The device information storage unit stores device information including pairing authentication information. The pairing processing unit performs, by using device-specific information of another second device the pairing process between the first device and the another second device, and stores the pairing authentication information in the device information storage unit. The data control unit transmits the pairing authentication information to the another second device. The data control unit of the another second device stores the received pairing authentication information in the device information storage unit.Type: ApplicationFiled: June 9, 2021Publication date: October 5, 2023Applicant: Mitsubishi Electric CorporationInventor: Koichi ORITO
-
Publication number: 20230117256Abstract: A display includes: a monitor that includes an input/output region and performs haptic feedback when detecting an input from an operator while an image is displayed, the input/output region being obtained by superimposing a first region for displaying an image, a second region including a plurality of input detection regions each for detecting an input from an operator, and a third region including a plurality of haptic feedback regions each for performing haptic feedback to the operator; and a data processor that determines a haptic output value in each of the plurality of haptic feedback regions on the basis of image data of an image being displayed on the first region and a detection result of an input from an operator in each of the plurality of input detection regions.Type: ApplicationFiled: May 29, 2020Publication date: April 20, 2023Applicant: Mitsubishi Electric CorporationInventor: Koichi ORITO
-
Publication number: 20230069255Abstract: A content distribution system includes: external display terminals; displays; an integrated monitoring device that generates content to be provided to an external display terminal among the plurality of external display terminals when the external display terminal is connected to a display among the displays; and an AP that transmits the content to the external display terminal through wireless communication. When the external display terminal is brought toward the display to a point at a specific distance from the display, the external display terminal transmits terminal attribute information to the display through wireless communication, the display transmits device attribute information and the terminal attribute information, to the integrated monitoring device, the integrated monitoring device generates the content corresponding to the device attribute information and the terminal attribute information, and the external display terminal displays the content.Type: ApplicationFiled: April 21, 2020Publication date: March 2, 2023Applicant: Mitsubishi Electric CorporationInventors: Shinichi USUI, Koichi ORITO
-
Patent number: 11587459Abstract: A display includes a calculation unit to calculate, when first and second events that occur in an external device are transmitted from the external device, operating time from when the first event is ended by operation for the first event to when the second event is ended by operation for the second event; a storage unit to store operating procedures that are histories of the operation for the second event and the associated operating times; and a display unit to display any of the operating procedures in the storage unit, according to instruction from the calculation unit. When the second event is newly transmitted after the calculation of the operating time is completed, the calculation unit selects an operating procedure used for operation guidance from among the operating procedures based on the operating times and causes the display unit to display the selected operating procedure, thereby executing the operation guidance.Type: GrantFiled: July 12, 2018Date of Patent: February 21, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventor: Koichi Orito
-
Publication number: 20200168118Abstract: A display includes a calculation unit to calculate, when first and second events that occur in an external device are transmitted from the external device, operating time from when the first event is ended by operation for the first event to when the second event is ended by operation for the second event; a storage unit to store operating procedures that are histories of the operation for the second event and the associated operating times; and a display unit to display any of the operating procedures in the storage unit, according to instruction from the calculation unit. When the second event is newly transmitted after the calculation of the operating time is completed, the calculation unit selects an operating procedure used for operation guidance from among the operating procedures based on the operating times and causes the display unit to display the selected operating procedure, thereby executing the operation guidance.Type: ApplicationFiled: July 12, 2018Publication date: May 28, 2020Applicant: Mitsubishi Electric CorporationInventor: Koichi ORITO
-
Patent number: 7825039Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.Type: GrantFiled: March 25, 2009Date of Patent: November 2, 2010Assignee: Tokyo Electron LimitedInventors: Toshiki Takahashi, Kohei Fukushima, Koichi Orito, Jun Sato
-
Publication number: 20090181548Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.Type: ApplicationFiled: March 25, 2009Publication date: July 16, 2009Inventors: Toshiki Takahashi, Kohei Fukushima, Koichi Orito, Jun Sato
-
Publication number: 20080274605Abstract: A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.Type: ApplicationFiled: July 2, 2008Publication date: November 6, 2008Applicants: Semiconductor Leading Edge Technologies, Inc., TOKYO ELECTRON LIMITEDInventors: Takeshi Hoshi, Tsuyoshi Saito, Hitoshi Kato, Koichi Orito
-
Publication number: 20070234961Abstract: A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.Type: ApplicationFiled: April 4, 2007Publication date: October 11, 2007Inventors: Toshiki Takahashi, Kohei Fukushima, Koichi Orito, Jun Sato
-
Patent number: 7094708Abstract: A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).Type: GrantFiled: January 19, 2004Date of Patent: August 22, 2006Assignee: Tokyo Electron LimitedInventors: Hitoshi Kato, Koichi Orito, Hiroyuki Kikuchi, Shingo Maku
-
Publication number: 20060022228Abstract: A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.Type: ApplicationFiled: January 21, 2005Publication date: February 2, 2006Applicants: Semiconductor Leading Edge Technologies, Inc., TOKYO ELECTRON LIMITEDInventors: Takeshi Hoshi, Tsuyoshi Saito, Hitoshi Kato, Koichi Orito
-
Publication number: 20050255712Abstract: A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).Type: ApplicationFiled: January 19, 2004Publication date: November 17, 2005Applicant: TOKYO ELECTRONLIMITEDInventors: Hitoshi Kato, Koichi Orito, Hiroyuki Kikuchi, Shingo Maku