Abstract: The present invention provides a method for calibrating an encoder which includes a scale and a light receiving unit configured to receive light reflected by the scale, and detects a change in relative position between the scale and the light receiving unit, the method comprising a measurement step of measuring a deformation amount of a surface shape of the scale, a specifying step of specifying, based on a measurement result in the measurement step, a range which includes a portion of a surface of the scale, where the deformation amount exceeds a threshold, and within which a detection value of the encoder is corrected, and a determination step of determining a correction value for correcting the detection value of the encoder within the range specified in the specifying step.

Abstract: A photoacoustic apparatus is configured to adjust an irradiation range and a quantity of light to be emitted to a subject according to the size of a field of view.

Abstract: An ultrasonic probe including a unit that changes a quantity of light emitted on a subject.

Abstract: A lithography apparatus for performing pattern formation on a substrate includes a stage configured to hold the substrate and be movable, an optical system configured to irradiate the substrate with an energy beam for the pattern formation, and a controller configured to set an arrangement of first and second marks for overlay inspection, which is variable with respect to a first substrate for condition setting, and control the stage and the optical system so that first processing for forming the first mark on the first substrate without the pattern formation and second processing for forming the second mark on the first substrate with the pattern formation are performed based on the set arrangement.

Abstract: Provided is a detection apparatus that detects a mark with a periodic structure and includes an illumination optical system configured to irradiate light on the mark; a light receiving optical system configured to receive a diffracted light from the mark when a relative position between the illumination optical system and the mark is changed in the measurement direction; and a photodetector configured to detect the diffracted light from the light receiving optical system. Here, a numerical aperture of the light receiving optical system in the measurement direction is larger than a numerical aperture of the light receiving optical system in the non-measurement direction in the plane on which the mark is formed.

Abstract: The present invention relates to a method for measuring inclination of a beam emitted to a substrate with respect to an optical-axis direction of an optical system for forming the beam. The method includes moving the substrate to a first height and a second height and turning the substrate about a rotational axis in the optical-axis direction. The method further includes acquiring a beam position with respect to the substrate situated at each of the first height and the second height both before and after the turning and determining the inclination of the beam based on the first height, the second height, and the beam positions.

Abstract: The present invention provides a drawing apparatus which performs drawing on a substrate with a plurality of charged particle beams, the apparatus comprising a blanker array including a plurality of blankers and configured to individually blank the plurality of charged particle beams, a plurality of deflectors configured to individually deflect a plurality of charged particle beam groups constituting the plurality of charged particle beams, and a controller configured to individually control positions of the plurality of charged particle beam groups by the plurality of deflectors, and individually control blanking of the plurality of charged particle beams by the blanker array, based on information of a region on the substrate where a shot region exists.

Abstract: The present invention provides a method for calibrating an encoder which includes a scale and a light receiving unit configured to receive light reflected by the scale, and detects a change in relative position between the scale and the light receiving unit, the method comprising a measurement step of measuring a deformation amount of a surface shape of the scale, a specifying step of specifying, based on a measurement result in the measurement step, a range which includes a portion of a surface of the scale, where the deformation amount exceeds a threshold, and within which a detection value of the encoder is corrected, and a determination step of determining a correction value for correcting the detection value of the encoder within the range specified in the specifying step.

Abstract: A method includes a first step of forming a circuit pattern and an alignment mark on a substrate and a second step of measuring a position of the alignment mark and positioning the substrate. The alignment mark includes a first linear pattern arranged on one side of a first straight line, a second linear pattern arranged on the other side of the first straight line, a third linear pattern arranged on one side of a second straight line, and a fourth linear pattern arranged on the other side of the second straight line. The first step includes determining total number of the third and fourth linear patterns to be formed and total number of the first and second linear patterns to be formed based on required precisions in directions along the first and second straight lines.

Abstract: An apparatus includes an optical system configured to irradiate a surface of a substrate with a beam, a control unit configured to control a position of the irradiation of the beam, and a first measurement unit and a second measurement unit each configured to measure a position of a mark formed on the substrate. The second measurement unit is placed at a position closer to an optical axis of the optical system than the first measurement unit is. Based on a position measurement value measured by the first measurement unit and position measurement values measured at different timings by the second measurement unit, the control unit controls the position of the beam irradiated to the substrate. The position measurement values measured at the different timings are values obtained from the same mark or values obtained from two marks adjacent to a common shot area.

Abstract: A lithography apparatus for substrate patterning, includes a substrate stage having a reference mark, an optical system irradiating the substrate with the charged particle beam, a first measurement device measuring a position of an alignment mark formed on the substrate, a second measurement device having an optical axis apart from an axis of the optical system by a distance shorter than that of the first measurement device, and measuring a position of the reference mark, a processor obtaining a base line of the first measurement device based on positions of the reference mark respectively measured by the first and second measurement device and a base line of the second measurement device, the position of the reference mark being measured by the second measurement device based on an optical signal obtained via the reference mark with the stage moved.

Abstract: A lithography apparatus for performing pattern formation on a substrate includes a stage configured to hold the substrate and be movable, an optical system configured to irradiate the substrate with an energy beam for the pattern formation, and a controller configured to set an arrangement of first and second marks for overlay inspection, which is variable with respect to a first substrate for condition setting, and control the stage and the optical system so that first processing for forming the first mark on the first substrate without the pattern formation and second processing for forming the second mark on the first substrate with the pattern formation are performed based on the set arrangement.

Abstract: An imprint apparatus for performing alignment between a mold and a substrate and imprinting a pattern of the mold to a layer of the substrate. A holder holds the mold. A stage holds the substrate opposite to the mold held by the holder. A microscope, including an image pickup device, detects a first alignment mark formed in the mold, via a first image pickup area of the image pickup device, and detects a second alignment mark formed in the substrate, via a second image pickup area of the image pickup device. The first and second image pickup areas do not overlap with each other.

Abstract: A lithography apparatus includes a first measurement device which measures a position of a mark on a substrate with light, a second measurement device which measures a position of a reference mark on a stage with a charged-particle, a detector which detects the position of the stage in a first direction parallel to the axis of a projection system and a second direction perpendicular to this axis, and a controller. The controller determines a charged-particle beam, in which the angle, with respect to the first direction, at which it is incident on the reference mark falls within a tolerance, and obtains a baseline for the first measurement device from the position of the reference mark measured by the second measurement device using the determined charged-particle beam and the position of the reference mark measured by the first measurement device.

Abstract: A reticle manufacturing method of the present invention comprises the steps of holding a reference mask blank by a reference chuck to measure a surface shape of the reference mask blank as a first surface shape, holding the reference mask blank by a reticle chuck of the exposure apparatus to measure a surface shape of the reference mask blank as a second surface shape, holding the electron beam drawing mask blank by the reference chuck to measure a surface shape of the electron beam drawing mask blank as a third surface shape, calculating a difference between the measurement values of the first surface shape and the second surface shape as a first deference value, calculating, as a forth surface shape, a surface shape of the electron beam drawing mask blank held by the reticle chuck on the basis of the first deference value and the measurement value of the third surface shape, and drawing the pattern on the electron beam drawing mask blank on the basis of the forth surface shape.

Abstract: The present invention provides a position detection apparatus including a first obtaining unit configured to obtain imaging characteristics of an imaging optical system for a plurality of light beams, having different wavelength with each other, of the light having the wavelength width, a second obtaining unit configured to obtain optical images of a target object for the plurality of light beams, a restoration unit configured to restore optical images of the target object for the plurality of light beams by correcting, deterioration in the obtained optical images of the target object attributed to the imaging optical system, based on the obtained imaging characteristics of the imaging optical system, and a generation unit configured to generate an optical image of the target object for light including the plurality of light beams by synthesizing the restored optical images of the target object for the plurality of light beams.

Abstract: A lithography apparatus includes a first measurement device which measures a position of a mark on a substrate with light, a second measurement device which measures a position of a reference mark on a stage with a charged-particle, a detector which detects the position of the stage in a first direction parallel to the axis of a projection system and a second direction perpendicular to this axis, and a controller. The controller determines a charged-particle beam, in which the angle, with respect to the first direction, at which it is incident on the reference mark falls within a tolerance, and obtains a baseline for the first measurement device from the position of the reference mark measured by the second measurement device using the determined charged-particle beam and the position of the reference mark measured by the first measurement device.

Abstract: A surface shape measurement apparatus is configured to measure a surface shape of an object to be measured, and includes a beam splitter configured to split white light from a light source into two light beams, a pair of prisms each configured to increase an incident angle of each light beam that has been split by the beam splitter and directed to the object or a reference surface, each prism having an antireflection part that is formed at a period of a wavelength of the white light or smaller and has a moth-eye shape, a superimposition unit configured to superimpose object light from the object with reference light from the reference surface and has passed the second prism, and to generate white interference light, and a Lyot filter configured to discretely separate the white interference light for each of a plurality of wavelengths.

Abstract: A pattern transfer apparatus transfers an imprint pattern formed on a mold, provided with an alignment mark, to a resin material on a substrate, provided with an alignment mark. A first image pickup device obtains an image of an object positioned at a first object position. A second image pickup device obtains an image of an object positioned at a second object position. The second object position is more distant from the alignment mark of the mold than the first object position. An optical system forms an image of an object positioned at the first object position and an image of an object positioned at the second object position. Alignment is performed based on first and second information obtained about positions of images of an alignment mark of a reference substrate and an alignment mark of the substrate, to transfer the imprinting pattern to the resin material.

Abstract: A reticle manufacturing method of the present invention comprises the steps of holding a reference mask blank by a reference chuck to measure a surface shape of the reference mask blank as a first surface shape, holding the reference mask blank by a reticle chuck of the exposure apparatus to measure a surface shape of the reference mask blank as a second surface shape, holding the electron beam drawing mask blank by the reference chuck to measure a surface shape of the electron beam drawing mask blank as a third surface shape, calculating a difference between the measurement values of the first surface shape and the second surface shape as a first deference value, calculating, as a forth surface shape, a surface shape of the electron beam drawing mask blank held by the reticle chuck on the basis of the first deference value and the measurement value of the third surface shape, and drawing the pattern on the electron beam drawing mask blank on the basis of the forth surface shape.