Abstract: A thermoelectric conversion element that has a power generation layer containing an iron-aluminum based magnetic alloy material containing equal to or more than 70 weight percent of iron and aluminum in total. The power generation layer generates an electromotive force, due to an anomalous Nernst effect that develops in the magnetic alloy material in response to a temperature gradient applied thereto, in a direction intersecting both the magnetization direction of the magnetic alloy material and the direction of the applied temperature gradient.

Abstract: Provided are an exterior body and an abnormality detector capable of suppressing bulking even when a heat generation detection function is provided. The exterior body of an electronic device generates heat during operation and is characterized by being provided with a magnetic body that is at least a portion of the exterior body, that has spontaneous magnetization, and that generates an electromotive force by exhibiting an abnormal Nernst effect through heat generation of the electronic device, wherein an electrode for extracting power is provided to the magnetic body.

Abstract: In order to enable the measurement of thermal property information about a subject, this thermal diffusion coefficient measuring device, which is used by contacting the surface of a living body, is provided with: a biological information sensor comprising a temperature sensor and a heat flux sensor; and a heating/cooling control means. The temperature sensor is provided at a position contacting the surface of the living body, and operates so as to detect skin temperature. The heat flux sensor is provided at a position contacting the surface of the living body, while being adjacent to the temperature sensor, and operates so as to detect heat flux on the surface of the living body. The heating/cooling control means enables the measurement of the temperature diffusion coefficient of a thermal resistance component that is present between the biological information sensor and a deep inner portion of the living body.

Abstract: A thermoelectric conversion element that has a power generation layer containing an iron-aluminum based magnetic alloy material containing equal to or more than 70 weight percent of iron and aluminum in total. The power generation layer generates an electromotive force, due to an anomalous Nernst effect that develops in the magnetic alloy material in response to a temperature gradient applied thereto, in a direction intersecting both the magnetization direction of the magnetic alloy material and the direction of the applied temperature gradient.

Abstract: A portable power supply according to the present invention is provided with a combustion device (20) and a heating container (30) that retains an object to be heated, wherein at least a part of a portion of the heating container, the portion being directly heated by the combustion device, is provided with a magnetic metal plate (32) that has spontaneous magnetization and that generates electromotive force due to an anomalous Nernst effect induced by the heating, and wherein electrodes (33a, 33b) for drawing power are provided. Thus, the heating container for generating electricity has a simple configuration, and furthermore the portable power supply is provided with both the heating container and the combustion device.

Abstract: A magnetic alloy material that includes iron and cobalt as main components and at least one element selected from the group containing of platinum, gold, and iridium.

Abstract: Provided are an exterior body and an abnormality detector capable of suppressing bulking even when a heat generation detection function is provided. The exterior body of an electronic device generates heat during operation and is characterized by being provided with a magnetic body that is at least a portion of the exterior body, that has spontaneous magnetization, and that generates an electromotive force by exhibiting an abnormal Nernst effect through heat generation of the electronic device, wherein an electrode for extracting power is provided to the magnetic body.

Abstract: In order to determine information about the generation of heat in a bearing (10) in a simple manner, a bearing (10) includes an outer ring (12) secured to a securing member, and an inner ring (11) provided on the inside of the outer ring (12) and secured to a shaft that rotates in the circumferential direction relative to the securing member. A thermal flow sensor (14) is provided as a coating on a securing-side surface that includes the outer ring (12), and generates a thermoelectromotive force including information about frictional heat generated with the rotation of the shaft.

Abstract: A magnetic alloy material according to the present disclosure is an iron-aluminum-terbium based magnetic alloy material containing a total of 70 atomic percent or more of three elements of iron, aluminum, and terbium.

Abstract: A thermoelectric conversion element 10 includes an anomalous Nernst material 11 having the anomalous Nernst effect, in which: the anomalous Nernst material 11 includes at least an element having the inverse spin-Hall effect; and the element is spin-polarized. By applying, for example, a magnetic field to such the thermoelectric conversion element 10 in the x direction and a temperature gradient thereto in the z direction, thermoelectromotive force can be taken out from terminals 12.

Abstract: In order to determine information about the generation of heat in a bearing (10) in a simple manner, a bearing (10) includes an outer ring (12) secured to a securing member, and an inner ring (11) provided on the inside of the outer ring (12) and secured to a shaft that rotates in the circumferential direction relative to the securing member. A thermal flow sensor (14) is provided as a coating on a securing-side surface that includes the outer ring (12), and generates a thermoelectromotive force including information about frictional heat generated with the rotation of the shaft.

Abstract: A thermoelectric conversion unit includes a plurality of pipes 1 and a thermoelectric conversion element. A first fluid flows through the pipe 1. The thermoelectric conversion element 2 is wound around each of the pipes 1, and generates electric power due to a temperature difference between the first fluid and a second fluid flowing outside the pipe 1. Further, the thermoelectric conversion element 2 has a sheet shape.

Abstract: In order to enable the measurement of thermal property information about a subject, this thermal diffusion coefficient measuring device, which is used by contacting the surface of a living body, is provided with: a biological information sensor comprising a temperature sensor and a heat flux sensor; and a heating/cooling control means. The temperature sensor is provided at a position contacting the surface of the living body, and operates so as to detect skin temperature. The heat flux sensor is provided at a position contacting the surface of the living body, while being adjacent to the temperature sensor, and operates so as to detect heat flux on the surface of the living body. The heating/cooling control means enables the measurement of the temperature diffusion coefficient of a thermal resistance component that is present between the biological information sensor and a deep inner portion of the living body.

Abstract: A relation search system includes: a storage means (1) which stores a data set which includes a first-type data group and a second-type data group which are two types of data group that are acquired by different methods; a data adaptation means (2) which either corrects or reconstructs either first data which belongs to the first-type data group or second data which belongs to the second-type data group and which is associated with the first data, such that a divergence which arises between the first data and the second data because of the difference in the methods for the acquisition thereof is reduced; and a learning means (3) which, using the data set which includes the corrected or reconstructed data, carries out machine learning.

Abstract: A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

Abstract: The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a p

Abstract: A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.

Abstract: A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.

Abstract: A ? gate FinFET structure having reduced variations in off-current and parasitic capacitance and a method for production thereof are provided. The structure of an element is improved so that an off-current suppressing capability can be exhibited more strongly. A field effect transistor, wherein a first insulating film and a semiconductor region are provided so as to protrude upward with respect to the flat surface of a base, the field effect transistor has a gate electrode, a gate insulating film and a source/drain region, and a channel is formed at least on the side surface of the semiconductor region, wherein that the first insulating film is provided on an etch stopper layer composed of a material having an etching rate lower than at least the lowermost layer of the first insulating film for etching under a predetermined condition.

Abstract: A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.