Abstract: A display unit which the view angle is limited and the front luminance is improved is provided. The display unit includes a display device, and a light guiding part which is provided to face the display device, has an incident face on the side opposing to the display device, an emitting face on the opposite side of the display device, and a reflective face on the side face, and has a cross section expanding from the incident face to the emitting face.

Abstract: A light illuminating apparatus used for a laser annealing apparatus includes a first light splitting unit (16) and a second light splitting unit (20) for splitting a sole laser beam into n laser beams, and a synthesis unit (21) for synthesizing an m'th laser beam, radiated from the first light splitting unit (16), and an m'th laser beam radiated from the second light splitting unit (20), to each other, where m is an integer not less than 1 and not larger than n. The first light splitting unit (16) and the second light splitting unit (20) are formed by the same optical components and are arrayed inverted with respect to each other.

Abstract: According to the present invention, a laser annealing apparatus (10) includes a beam splitter (14) composed of first and second beam splitters (21, 22) disposed in parallel to each other to split one laser beam into four laser beams not interfering with each other, and a reflecting mirror (23). Upon the second beam splitter (22), there are incident a transmitted beam from the first beam splitter (21) and a laser beam outgoing from the first beam splitter (21) and then reflected by the reflecting mirror (23). The second beam splitter (22) provides two transmitted beams to outside, and the reflecting mirror (23) reflects the reflected beam from the second beam splitter (22) for traveling to outside. The distance between the two beam splitters (21 and 22), and the distance between the first beam splitter (21) and reflecting mirror (23), is larger than L/(2 cos ?) (where ? is an incident angle and L is a coherence length).

Abstract: A light illuminating apparatus used for a laser annealing apparatus includes a first light splitting unit (16) and a second light splitting unit (20) for splitting a sole laser beam into n laser beams, and a synthesis unit (21) for synthesizing an m'th laser beam, radiated from the first light splitting unit (16), and an m'th laser beam radiated from the second light splitting unit (20), to each other, where m is an integer not less than 1 and not larger than n. The first light splitting unit (16) and the second light splitting unit (20) are formed by the same optical components and are arrayed inverted with respect to each other.

Abstract: A light irradiator used as a laser annealing apparatus is provided which includes a controller (9) which controls a solid-state laser (4) to make pulse-on operation by detecting that the angle of rotation of a rotating shaft (7a) becomes +? after the rotating direction of the rotating shaft (7a) changes from clockwise to counterclockwise and then make pulse-off operation by detecting that the angle of rotation become ??, while controlling the solid-state laser (4) to make the pulse-on operation by detecting that the angle of rotation becomes ?? after the rotating direction changes from counterclockwise to clockwise and then make the pulse-off operation by detecting that the angle of rotation becomes +?.

Abstract: In a method of fabricating a thin film transistor through conversion of an amorphous silicon film into a polysilicon film to be an active layer of the thin film transistor by a laser annealing treatment, a laser annealing apparatus comprising a plurality of semiconductor laser devices arranged performs the laser annealing treatment by irradiating the surface of the amorphous silicon film with laser light uniformized in the light intensity of the laser light radiated onto the surface of the amorphous silicon film, whereby the crystal grain diameter of the polysilicon film obtained through recrystallization is uniformized, and it is possible to obtain a thin film transistor with transistor characteristics enhanced by using the polysilicon film as the active layer.

Abstract: In a method of fabricating a thin film transistor through conversion of an amorphous silicon film into a polysilicon film to be an active layer of the thin film transistor by a laser annealing treatment, a laser annealing apparatus comprising a plurality of semiconductor laser devices arranged performs the laser annealing treatment by irradiating the surface of the amorphous silicon film with laser light uniformized in the light intensity of the laser light radiated onto the surface of the amorphous silicon film, whereby the crystal grain diameter of the polysilicon film obtained through recrystallization is uniformized, and it is possible to obtain a thin film transistor with transistor characteristics enhanced by using the polysilicon film as the active layer.

Abstract: According to the present invention, a laser annealing apparatus (10) includes a beam splitter (14) composed of first and second beam splitters (21, 22) disposed in parallel to each other to split one laser beam into four laser beams not interfering with each other, and a reflecting mirror (23). Upon the second beam splitter (22), there are incident a transmitted beam from the first beam splitter (21) and a laser beam outgoing from the first beam splitter (21) and then reflected by the reflecting mirror (23). The second beam splitter (22) provides two transmitted beams to outside, and the reflecting mirror (23) reflects the reflected beam from the second beam splitter (22) for traveling to outside. The distance between the two beam splitters (21 and 22), and the distance between the first beam splitter (21) and reflecting mirror (23), is larger than L/(2 cos &thgr;) (where &thgr; is an incident angle and L is a coherence length).

Abstract: In a method of fabricating a thin film transistor through conversion of an amorphous silicon film into a polysilicon film to be an active layer of the thin film transistor by a laser annealing treatment, a laser annealing apparatus comprising a plurality of semiconductor laser devices arranged performs the laser annealing treatment by irradiating the surface of the amorphous silicon film with laser light uniformized in the light intensity of the laser light radiated onto the surface of the amorphous silicon film, whereby the crystal grain diameter of the polysilicon film obtained through recrystallization is uniformized, and it is possible to obtain a thin film transistor with transistor characteristics enhanced by using the polysilicon film as the active layer.