Abstract: A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.

Abstract: A magnetic sensor has a three-terminal magnetic device consisting of an emitter, a base, and a collector. A semiconductor layer serving as the collector and a magnetic multilayered film serving as the base form a Schottky junction. The magnetic multilayered film has two magnetic films opposing each other with a nonmagnetic film between them. The emitter constructed of a metal film and the base are connected via a tunnel insulating film. The relationship between the magnetization directions in the magnetic films changes in accordance with an external magnetic field, and this changes the value of a current flowing through the magnetic device. The external magnetic field is sensed on the basis of this change in the current value.

Abstract: A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.

Abstract: A magnetic sensor has a three-terminal magnetic device consisting of an emitter, a base, and a collector. A semiconductor layer serving as the collector and a magnetic multilayered film serving as the base form a Schottky junction. The magnetic multilayered film has two magnetic films opposing each other with a nonmagnetic film between them. The emitter constructed of a metal film and the base are connected via a tunnel insulating film. The relationship between the magnetization directions in the magnetic films changes in accordance with an external magnetic field, and this changes the value of a current flowing through the magnetic device. The external magnetic field is sensed on the basis of this change in the current value.

Abstract: A magnetic device, comprises a first magnetic layer; a second magnetic layer on the magnetic layer and having a coercive force smaller than that of the first magnetic layer; a semiconductor layer between the first and second magnetic layers so that photo-induced magnetism occurs between the first and second magnetic layers when the semiconductor layer is irradiated with light, a third magnetic layer on the second magnetic layer, the third magnetic layer having a coercive force larger than the coercive force of the second magnetic layer, and a second semiconductor layer between the second and third magnetic layers, magnetism being induced between the second and third magnetic layers when the second semiconductor layer is irradiated with light.

Abstract: A multilayer comprising magnetic layers and nonmagnetic layers, which are stacked in a manner to produce a magnetoresistance effect, is formed on a main surface of a substrate having at least the surface portion formed of a single crystal of cubic system. The (110) plane of said single crystal constituting the main surface of the substrate. The magnetic layers are distorted such that a uniaxial easy axis of magnetization is formed within a plane.

Abstract: A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.

Abstract: Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.

Abstract: An oxide film having, for example, a spinel structure is deposited on a substrate, and ions of an inert gas such as He, Ar, Ne, Kr, or Xe, oxygen gas ions, or metal ion of a film constituting element are radiated onto the film during deposition, thereby to obtain an oxide thin film in which a specific crystal direction is oriented.

Abstract: There is disclosed a magnetoresistance effect element including a multilayer constituted by a magnetic layers in which fine magnetic metal particles of crystalline or amorphous containing at least one element of Fe, Co, and Ni are dispersed in a matrix containing at least one element selected from the group consisting of noble metals and Cu, and non-magnetic layers containing a noble metal.

Abstract: A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.

Abstract: Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.

Abstract: A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.

Abstract: A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.

Abstract: A magnetoresistance effect element includes a multilayer in which magnetic layers, mixture layers each constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element, and nonmagnetic layers are stacked on each other so as to exhibit a magnetoresistance effect. In this element, each of the mixture layers is interposed between the magnetic layer and the nonmagnetic layer, and 2 (X.sub.1 /X.sub.n)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X.sub.1 is the atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and X.sub.n is the atomic concentration (%) of the ferromagnetic element of an n-th atomic layer closest to the nonmagnetic layer.

Abstract: A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.

Abstract: There is disclosed a permanent magnet comprising a sintered alloy composed of rare earth elements (R), boron and iron. This permanent magnet is substantially constituted by 2-phase systems, i.e. a ferromagnetic Fe-rich phase (Nd.sub.2 Fe.sub.14 B) and a nonmagnetic R-rich phase (Nd.sub.97 Fe.sub.3), and has BH.sub.max of more than 38.0 MGOe.

Abstract: An amorphous oxide magnetic material is represented by a formula (1-y) [Ln.sub.1-x A.sub.x MnO.sub.3-.delta. ].multidot.y[XO] wherein x and y fall within the ranges of 0.1.ltoreq.x.ltoreq.1.0 and y.ltoreq.0.7, respectively. Ln represents at least one element selected from the group consisting of Ln and a rare earth element. A represents at least one element selected from the group consisting of Ca, Sr, Ba and Pb, X represents at least one element selected from the group consisting of B, Bi, Si, Mg, Mo, V, Zn, P and Ge, and .delta. represents oxygen deficiency and .delta..ltoreq.1.

Abstract: The polycrystalline magnetic substance for magnetic refrigeration in or gas refrigeration accordance with the present invention comprises a plurality of magnetic alloy fine crystalline powders that include at least one kind of rare-earth element selected from the group of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb, with the remainder metal consisting substantially of 2 kinds selected from Al, Ni, Co, and Fe, and a metallic binder which forms a compact together with the fine crystalline particles, where the abundance ratio of the metallic binder in the compact is 1 to 80% by volume.

Abstract: A torque sensor of noncontact type, by which can be stably measured the torque of a shaft with a sufficient S/N ratio under the influence of external magnetic noise, such as an induction magnetic flux which is produced in an induction motor, and which can be readily disposed in a comparatively small space. When provided on an induction motor, the torque sensor is mounted on the induction motor in noncontacting relationship. The torque sensor detects the torque of the shaft and includes a pair of magnetic material members provided on respective circumferential portions of the peripheral surface of a shaft. A pair of magnetic detectors are disposed at opposite locations at which external magnetic fields having opposite phase exist. The detectors detect the variation of the magnetic characteristics of the magnetic materials, and a signal processing circuit produces a mean value of output signals obtained from the magnetic detectors.