Abstract: An ultrasonic diagnostic apparatus according to an embodiment includes a processing circuitry. The processing circuitry is configured to display, as a live image, an image that data output from an ultrasonic probe represents; recognize an image type of the live image; extract, out of past data collected before the live image, data at least a part of which is in common to the image type of the live image; and display an image that the extracted data represents on the same screen as that of the live image.

Abstract: A vehicle drive device and a control method therefor are provided. The vehicle drive device includes: a power source including a first rotating electrical machine; a second rotating electrical machine; a differential unit including three rotating elements to which a first output shaft, a second output shaft, and the second rotating electrical machine are connected; and an electronic control device. The electronic control device regeneratively controls the first rotating electrical machine and the second rotating electrical machine in such a manner that negative torque is applied to the first output shaft and the second output shaft, when performing regenerative control by the second rotating electrical machine in a drive mode in which torque from the power source is distributed to the first output shaft and the second output shaft by controlling torque of the second rotating electrical machine during deceleration of a vehicle.

Abstract: A startup method and startup program for microgrid that enable to stably start up the microgrid without producing frequency fluctuation is provided. An embodiment of the present disclosure is a startup method for microgrid configured by a plurality of inverter power supplies independently sharing a load and divided into a master that starts up first and a slave that starts up secondly and later, the startup method comprising: a master initial startup step of initially starting up the master in a CVCF mode; a slave initial startup step of initially starting up the slave in a grid interconnection mode; and a control mode changing step of the master and the slave changing control modes thereof when output fluctuation of the master and the slave becomes a predetermined threshold or less or when the master and the slave or other inverter power supplies become a predetermined operation state while output voltage of said master and said slave becomes a predetermined threshold or less.

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Abstract: This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

Abstract: A manufacturing method for a semiconductor device includes forming a dielectric film on a semiconductor substrate or on a lower electrode that is formed on a semiconductor substrate, attaching a metal to a predetermined area on a surface of the dielectric film selectively, forming a metal oxide film with an insulation property in the predetermined area on the surface of the dielectric film by applying heat treatment to the metal, and forming an upper electrode on the dielectric film in a state where the metal oxide film is formed in the predetermined area on the surface of the dielectric film.

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

Abstract: A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.

Abstract: A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

Abstract: A system for inputting data to a web page that is selectively accessed and displayed through a web browser executing on a computing device includes an electronic scratch pad on the computing device that is configured to identify data entry fields on an accessed web page and to retrieve a label corresponding to any identified data entry field of the web page. The electronic scratch pad records the label and any user input that is input using a user input device to the corresponding data entry field.

Abstract: There is provided a semiconductor device including: a first wiring; a second wiring; a dielectric layer configured to insulate the first wiring and the second wiring from each other; and an impedance adjustment layer formed between the first wiring and the second wiring, and configured to adjust an impedance between the first wiring and the second wiring.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: There is provided a semiconductor device. The semiconductor device includes a first electrode made of a metal, a first semiconductor, a first insulating film configured to be provided between the first electrode and the first semiconductor and to be made of an insulating transition metal oxide and an intermediate film configured to be provided between the first electrode and the first insulating film. A lower end of a conduction band of the intermediate film is lower than a Fermi level of the metal constituting the first electrode.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: There is provided a semiconductor device including: a first wiring; a second wiring; a dielectric layer configured to insulate the first wiring and the second wiring from each other; and an impedance adjustment layer formed between the first wiring and the second wiring, and configured to adjust an impedance between the first wiring and the second wiring.

Abstract: A system for inputting data to a web page that is selectively accessed and displayed through a web browser executing on a computing device includes an electronic scratch pad on the computing device that is configured to identify data entry fields on an accessed web page and to retrieve a label corresponding to any identified data entry field of the web page. The electronic scratch pad records the label and any user input that is input using a user input device to the corresponding data entry field.

Abstract: In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Abstract: A system for inputting data to a web page that is selectively accessed and displayed through a web browser executing on a computing device includes an electronic scratch pad on the computing device that is configured to identify data entry fields on an accessed web page and to retrieve a label corresponding to any identified data entry field of the web page. The electronic scratch pad records the label and any user input that is input using a user input device to the corresponding data entry field.