Abstract: A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.

Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.

Abstract: According to one embodiment, a template includes a base body, and a first film. The base body has a first surface and a second surface. The first surface includes silicon oxide and spreads along a first plane. The second surface crosses the first plane. The first film includes aluminum oxide. A direction from the second surface toward the first film is aligned with a direction perpendicular to the second surface. A thickness of the first film along the direction perpendicular to the second surface is not less than 0.3 nm and not more than 10 ?m. The first surface includes an unevenness.

Abstract: A pattern antenna, with excellent broadband antenna characteristics, that is formed in a small area is provided. The pattern antenna includes a substrate, a first ground portion formed on a first surface of the substrate, an antenna element portion, a protruding and short-circuiting portion, and a second ground portion. The antenna element portion includes a conductor pattern in which a plurality of bent portions are formed. The conductor pattern is formed on the first surface of the substrate and is electrically connected to the first ground portion. The protruding and short-circuiting portion includes a taper portion with a tapered shape, a protruding portion, and an extended portion extended toward a side opposite to a feed point as viewed in planar view. The second ground portion, with no contact with the taper portion, with such a shape that sandwiches at least a part of a tapered section of the taper portion as viewed in planar view.

Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):

Abstract: A hair removal tool is equipped with: a drive unit for driving a blade; a load detection unit for detecting the size of the load on the drive unit; and a control unit for changing the drive mode of the drive unit between a first drive mode for driving the drive unit at a first drive speed, a second drive mode for driving the drive unit at a second drive speed which is faster than the first drive speed, and a transition mode for driving the drive unit at a transition speed which is faster than the second drive speed. A first interval is set as the interval from when the drive mode is changed from the first drive mode to the transition mode until when the drive mode is changed from the transition mode to the second drive mode. A second interval is set as the interval from when the drive mode is changed from the transition mode to the second drive mode until when the drive mode is changed from the second drive mode to the first drive mode. The first interval is shorter than the second interval.

Abstract: A pattern antenna, with excellent broadband antenna characteristics, that is formed in a small area is provided. The pattern antenna includes a substrate, a first ground portion formed on a first surface of the substrate, an antenna element portion, a protruding and short-circuiting portion, and a second ground portion. The antenna element portion includes a conductor pattern in which a plurality of bent portions are formed. The conductor pattern is formed on the first surface of the substrate and is electrically connected to the first ground portion. The protruding and short-circuiting portion includes a taper portion with a tapered shape, a protruding portion, and an extended portion extended toward a side opposite to a feed point as viewed in planar view. The second ground portion, with no contact with the taper portion, with such a shape that sandwiches at least a part of a tapered section of the taper portion as viewed in planar view.

Abstract: According to one embodiment, a pattern formation method includes forming a structure body on a first surface of a patterning member, the structure body having protrusions and a recess. The protrusions are arranged at a first pitch along a first direction. The first direction is aligned with the first surface. The recess is between the protrusions. The method further includes forming a resin film of a block copolymer on the structure body. The block copolymer includes first portions and second portions. The first and second portions are arranged alternately at a second pitch along the first direction. The structure body includes first and second regions. The first portions are on the first regions. The second portions on the second regions. The method further includes removing the second portions and the second regions, introducing a metal to the first regions, and etching the patterning member using the first regions.

Abstract: A pattern antenna, with excellent broadband antenna characteristics, that is formed in a small area is provided. The pattern antenna includes a substrate, a first ground portion formed on a first surface of the substrate, an antenna element portion, a protruding and short-circuiting portion, and a second ground portion. The antenna element portion includes a conductor pattern in which a plurality of bent portions are formed. The conductor pattern is formed on the first surface of the substrate and is electrically connected to the first ground portion. The protruding and short-circuiting portion includes a taper portion with a tapered shape, a protruding portion, and an extended portion extended toward a side opposite to a feed point as viewed in planar view. The second ground portion, with no contact with the taper portion, with such a shape that sandwiches at least a part of a tapered section of the taper portion as viewed in planar view.

Abstract: A pattern antenna, with desired antenna characteristics, that is formed in a small area is provided. The pattern antenna includes a substrate, a ground portion formed on a first surface of the substrate, an antenna element portion, a short-circuiting portion, and a connecting portion. The antenna element portion is a conductor pattern including a conductor pattern in which a plurality of bent portions are formed. The conductor pattern is formed on the first surface of the substrate and, and is electrically connected to the grand portion. The short-circuiting portion includes a conductor pattern formed in a second surface, which is a different surface from the first surface. The conductor pattern is formed so as to at least partially overlap with the conductor pattern of the antenna element portion as viewed in planar view. The connecting portion is configured to electrically connect the conductor pattern of the antenna element portion to the conductor pattern of the short-circuiting portion.

Abstract: A semiconductor memory device of an embodiment includes a semiconductor layer, a gate electrode, and a charge storing layer provided between the semiconductor layer and the gate electrode. The charge storing layer includes polyoxometalates that contain copper (Cu) and tungsten (W).

Abstract: A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.

Abstract: A pattern forming method in an embodiment includes forming, on or above a substrate, a block copolymer layer containing a first polymer and a second polymer having lower surface energy than the first polymer, heat treating the block copolymer layer to separate the block copolymer layer into a first phase containing the first polymer and a second phase containing the second polymer, and using an atomic layer deposition process, selectively forming a metal layer on the first phase and selectively removing the second phase.

Abstract: A method for manufacturing a memory device of an embodiment includes: forming on a substrate a block copolymer layer which contains a first polymer and a second polymer having lower surface energy than that of the first polymer; performing thermal treatment on the block copolymer layer, to separate the block copolymer layer such that a first phase containing the first polymer and extending in the first direction and a second phase containing the second polymer and extending in the first direction are alternately arrayed; selectively forming on the first phase a first metal wiring layer extending in the first direction; forming on the first metal wiring layer a memory layer where resistance changes by application of a voltage; and forming on the memory layer a second metal wiring layer which extends in a second direction intersecting in the first direction.

Abstract: A pattern antenna, with excellent broadband antenna characteristics, that is formed in a small area is provided. The pattern antenna includes a substrate, a first ground portion formed on a first surface of the substrate, an antenna element portion, a protruding and short-circuiting portion, and a second ground portion. The antenna element portion includes a conductor pattern in which a plurality of bent portions are formed. The conductor pattern is formed on the first surface of the substrate and is electrically connected to the first ground portion. The protruding and short-circuiting portion includes a taper portion with a tapered shape, a protruding portion, and an extended portion extended toward a side opposite to a feed point as viewed in planar view. The second ground portion, with no contact with the taper portion, with such a shape that sandwiches at least a part of a tapered section of the taper portion as viewed in planar view.

Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).

Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugate chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.