Abstract: A trap apparatus provided between a chamber and an evacuating unit, includes an inlet port and an exhausting port to be respectively connected to the chamber and the evacuating unit; a cooling trap portion provided with a first space for cooling gas in the first space; and a bypass portion provided with a first channel capable of communicating between the inlet port and the first space, a second channel capable of communicating between the first space and the exhausting port, and a second space capable of communicating between the inlet port and the exhausting port, the bypass portion being relatively movable with respect to the cooling trap portion to selectively form a first path from the inlet port to the exhausting port via the first channel, the first space and the second channel, and a second path from the inlet port to the exhausting port via the second space.

Abstract: A trap apparatus provided between a chamber and an evacuating unit includes an inlet port and an exhausting port to be respectively connected to the chamber and the evacuating unit; a cooling trap portion provided with a first space for cooling gas in the first space; and a bypass portion provided with a first channel capable of communicating between the inlet port and the first space, a second channel capable of communicating between the first space and the exhausting port, and a second space capable of communicating between the inlet port and the exhausting port, the bypass portion being relatively movable with respect to the cooling trap portion to selectively form a first path from the inlet port to the exhausting port via the first channel, the first space and the second channel, and a second path from the inlet port to the exhausting port via the second space.

Abstract: Provided is a film forming apparatus which forms a film on a substrate held within a film forming container by supplying raw material gas onto the substrate. The apparatus includes: a supply mechanism which supplies the raw material gas into the container; an exhaust mechanism which exhausts gas from the container; a trap unit which is disposed in the course of an exhaust passage through which gas flows from the container to the exhaust mechanism, and traps the raw material gas by extracting a product containing the raw material gas; a purge gas supplying unit which is connected to join the exhaust passage between the container and the trap unit and supplies purge gas into the exhaust passage; and a pressure gauge which is disposed in a purge gas supplying passage through which the purge gas flows from the purge gas supplying unit into the exhaust passage.

Abstract: The object described above is achieved by providing a substrate processing apparatus comprising a chamber configured to process a substrate, a gas supply part configured to supply gas into the chamber, an exhaust part configured to exhaust the gas within the chamber, a first trap provided between the chamber and the exhaust part and connected to the chamber, and a second trap provided between the first trap and the exhaust part, characterized in that there is provided a temperature controller configured to set the first trap to a first temperature at which non-reaction components included in the gas react to form a polymer, and to set the second trap to a second temperature at which the non-reaction components included in the gas deposit as monomers.

Abstract: A sputtering method is for forming, in a vacuum chamber, an initial layer on a film formation target object and then further forming a second layer on the initial layer therein, and the method includes: in the vacuum chamber, arranging surfaces of a pair of targets to face each other while distanced apart from each other at a preset distance and to be inclined toward the film formation target object placed at a lateral position between the targets, and then sputtering the targets by generating a magnetic field space on the facing surfaces of the pair of targets, and thus forming the initial layer on the film formation target object by using particles sputtered by the sputtering; and further forming the second layer on the film formation target object at a higher film forming rate than a film forming rate of the initial layer.