Abstract: An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

Abstract: The problem addressed by the present invention is easily and by means of a simple configuration to form a filter layer having a different film thickness at each position. The present invention is a method for producing a variable-transmission-wavelength interference filter (16) configuring a plurality of filter units (28), and is characterized by: using a mask member (75) that is interposed between a sputtering target (73) and a light reception element array (15) and that has an aperture ratio that differs at the positions corresponding to each filter unit (28); and causing the vapor phase growth of a dielectric multi-layer film (16a) on the light reception element array (15) with the mask member (75) therebetween.

Abstract: An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

Abstract: An electron emitting device having a lower electrode on a side near to a substrate and an upper electrode on a side remote from the substrate respectively, formed of a plurality of electron emitting elements remitting electrons from a side of the upper electrode side, wherein space is formed between the electron emitting elements, and the upper electrode extends across the plurality of electron emitting elements and the space by a bridging portion of the upper electrode.

Abstract: An uppermost metal wiring layer is formed of titan Ti and titan nitride TiN formed thereon, on which tungsten W for filling a via hole can be deposited. The via hole is filled with W. The surface of a metal wiring layer below the uppermost metal wiring layer is covered with a low reflectivity film made of titan nitride. Thus, light incident on the surface of the semiconductor chip is prevented from reaching a substrate transistor within a semiconductor device and malfunctioning of the semiconductor device is prevented.

Abstract: In a semiconductor chip for Si chip based liquid crystal having insulating films and interconnection layers formed on a semiconductor substrate, a thin interconnection layer made of TiN/Ti having strong erosion resistance is formed on an uppermost interlayer insulating film having a flat surface to substantially expose the thin uppermost interconnection layer to the surface of the chip, the uppermost insulating film is covered with a protection film made of p-SiN and a thin insulating film having a mirror-like flat surface is formed on the uppermost interconnection layer.

Abstract: A liquid crystal display device has a semiconductor substrate. A plurality of switching elements are arranged on the substrate in matrix, and a plurality of pixel electrodes are provided above the switching elements, arranged in matrix corresponding to the switching elements. A liquid crystal layer is provided on the pixel electrodes. The switching element is connected with a corresponding pixel electrode by a wiring layer. Dummy layers are provided in the same level as the wiring layer so that a surface of the dummy layer is substantially flush with a surface of the wiring layer.

Abstract: A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.