Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A high voltage pulse generation device includes n transformer cores configuring a transformer, n being a natural number of 2 or more, each of the n transformer cores being configured to form a magnetic circuit along a first plane and to have a width in a first direction parallel to the first plane larger than a width in a second direction parallel to the first plane and perpendicular to the first direction; n primary electric circuits of the transformer connected in parallel to each other, each of the n primary electric circuits including at least one primary coil, and m pulse generation units connected in parallel to the at least one primary coil, m being a natural number equal to or more than 2; and a secondary electric circuit of the transformer including a secondary coil and connected to a pair of discharge electrodes.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A spectral purity range (E95) of a laser beam output from an amplifying laser device (300) is measured by spectral purity range measuring means. To have the measured spectral purity range (E95) within an allowable range E950±dE95 of a target spectral purity range (E950), discharge timing from a time when discharge is started by an oscillating laser device (100) to a time when discharge is started by the amplifying laser device (300) is controlled, and the spectral purity range (E95) is controlled to be stabilized.

Abstract: A spectral purity range (E95) of a laser beam output from an amplifying laser device (300) is measured by spectral purity range measuring means. To have the measured spectral purity range (E95) within an allowable range E950±dE95 of a target spectral purity range (E950), discharge timing from a time when discharge is started by an oscillating laser device (100) to a time when discharge is started by the amplifying laser device (300) is controlled, and the spectral purity range (E95) is controlled to be stabilized.

Abstract: The oscillation pulse width is extended in a gas laser apparatus emitting ultraviolet radiation by a high-repetition rate oscillating operation. The gas laser apparatus has a pair of laser discharge electrodes connected to the output terminals of a magnetic pulse compression circuit and disposed in a laser chamber. The pulse width is extended by determining circuit constants so that the period of the oscillating current flowing between the discharge electrodes is shortened and, at the same time, the peak value of the current is increased, whereby the laser gas is continuously excited even during at least one half-cycle subsequent to the first half-cycle of the oscillating current to sustain the laser oscillating operation.

Abstract: To provide an ArF excimer laser device capable of a pulsewidth FWHM of 20 ns or more, a pulse duration time of 50 ns or more, and a spectrum line width FWHM of 0.35 pm or less, and to provide a KrF excimer laser device and a fluorine laser device with stretched pulse widths. The ArF excimer laser device connects to the output terminal of a magnetic pulse compression circuit and has a pair of laser discharge electrodes located within the laser chamber and a peaking capacitor connected in parallel with the pair of laser discharge electrodes. The output waveform of the laser pulse has a bifurcated form with a front half peak and a later half peak and, if the peak value of the front half peak is P1 and the peak value of the later half peak is P2 and the (proportion of the pulse later half peak)=P2/(P1+P2)×100(%), then the (proportion of the pulse later half peak) is 50% or more.

Abstract: A corona preionization electrode unit for use in gas laser apparatus, wherein the electric field for corona discharge is concentrated, and ultraviolet radiation is not blocked, and further the laser gas stream is not obstructed, thereby allowing efficient, stable and uniform corona preionization. The corona preionization electrode unit is disposed in a gas laser apparatus together with a pair of main discharge electrodes for ionizing and exciting a laser gas. The corona preionization electrode unit includes a first electrode covered with a dielectric material and a second electrode placed in contact with the outer surface of the dielectric material around the first electrode. The corona preionization electrode unit is positioned in the vicinity of either one of the main discharge electrodes. The second electrode is a plate-shaped member having a straight edge contacting at least the outer surface of the dielectric material.

Abstract: An ArF excimer laser device and a fluoride laser device for exposure which is structured so that primary current that infuses energy from a magnetic pulse compression circuit to discharge electrodes via a peaking capacitor overlaps secondary current that infuses energy from the capacitor in the final stage of the magnetic pulse compression circuit to the discharge electrodes, the oscillation cycle of the secondary current is set longer than the oscillation cycle of the primary current, and a pulse of laser oscillation operation is effected by the initial half-cycle of the discharge oscillation current waveform that reverses the polarity of the primary current being overlapped by the secondary current and by at least two half-cycles continuing thereafter, as a result of which a high repetition rate, pulse stretch, line-narrowed ArF excimer laser device and fluorine laser device can be implemented at repetition rate exceeding 2 kHz.

Abstract: A pulse oscillating gas laser device, which can reduce an influence of a shock wave caused by primary discharge and perform stable laser oscillation is provided. To this end, the device is a pulse oscillating gas laser device for exciting a laser gas by causing primary discharge in a pulse form between a pair of discharge electrodes (14, 15) opposing each other and oscillating laser light, in which a rib portion (42) with insulating properties for preventing creeping discharge is provided on a cathode base (36) with insulating properties, to which the discharge electrode (15) at a high voltage side is fixed, and a damping material (45) for attenuating a shock wave (41) caused by the primary discharge is inserted in an inside of a groove portion (52) between a raised portion (43) of the rib portion (42) and the high-voltage side discharge electrode (15).

Abstract: The present invention relates to an ArF excimer laser apparatus for lithography capable of stretching the laser pulse width even when the repetition rate exceeds 4 kHz and also relates to a KrF excimer laser apparatus and fluorine laser apparatus for lithography capable of stretching the laser pulse width even when the repetition rate exceeds 2 kHz.

Abstract: An ArF excimer laser device for performing an oscillating operation with a repetition rate of more than 3 kHz and an oscillating laser pulse width (Tis) of more than 30 ns. The laser operation is carried out in an initial half-period of an electrical discharge oscillating current waveform of a pulse of reversed polarity generated by a high voltage pulse generating device and in at least two subsequent half-periods. The pressure of the laser gas in the laser chamber is 2.5 to 3.5 atm, the fluorine concentration is 0.12% or less, and the argon gas concentration 3% or less. As a result, the laser pulse width (Tis) can be set to more than 30 ns.

Abstract: A pulse oscillating gas laser device, which can reduce an influence of a shock wave caused by primary discharge and perform stable laser oscillation is provided. To this end, the device is a pulse oscillating gas laser device for exciting a laser gas by causing primary discharge in a pulse form between a pair of discharge electrodes (14, 15) opposing each other and oscillating laser light, in which a rib portion (42) with insulating properties for preventing creeping discharge is provided on a cathode base (36) with insulating properties, to which the discharge electrode (15) at a high voltage side is fixed, and a damping material (45) for attenuating a shock wave (41) caused by the primary discharge is inserted in an inside of a groove portion (52) between a raised portion (43) of the rib portion (42) and the high-voltage side discharge electrode (15).

Abstract: To reduce the cross-sectional area of a discharge circuit loop in the excitation circuit of a gas laser device that discharges ultraviolet rays, thereby reducing the inductance and enhancing the laser oscillation efficiency, the gas laser device is provided with a laser chamber (1) in which laser gas is sealed and which has a circulation means that circulates the laser gas within the chamber, a pair of main discharge electrodes (3, 4) disposed at a prescribed separation within said laser chamber (1), a discharge circuit having peaking capacitors (C3) that are connected in parallel with the pair of main discharge electrodes (3, 4,) and a preionization unit (15) in which a first electrode (9) and a second electrode (7) are disposed facing each other with a dielectric (8) interposed between them, the preionization unit (15) being disposed running along each side of one of the main discharge electrodes (4), that one of the main discharge electrodes (4) and the peaking capacitors (C3) being connected via a conduct

Abstract: The present invention relates to an ArF excimer laser apparatus for lithography capable of stretching the laser pulse width even when the repetition rate exceeds 4 kHz and also relates to a KrF excimer laser apparatus and fluorine laser apparatus for lithography capable of stretching the laser pulse width even when the repetition rate exceeds 2 kHz.

Abstract: To reduce the cross-sectional area of a discharge circuit loop in the excitation circuit of a gas laser device that discharges ultraviolet rays, thereby reducing the inductance and enhancing the laser oscillation efficiency, the gas laser device is provided with a laser chamber (1) in which laser gas is sealed and which has a circulation means that circulates the laser gas within the chamber, a pair of main discharge electrodes (3, 4) disposed at a prescribed separation within said laser chamber (1), a discharge circuit having peaking capacitors (C3) that are connected in parallel with the pair of main discharge electrodes (3, 4,) and a preionization unit (15) in which a first electrode (9) and a second electrode (7) are disposed facing each other with a dielectric (8) interposed between them, the preionization unit (15) being disposed running along each side of one of the main discharge electrodes (4), that one of the main discharge electrodes (4) and the peaking capacitors (C3) being connected via a conduct

Abstract: An ArF excimer laser device and a fluoride laser device for exposure which is structured so that primary current that infuses energy from a magnetic pulse compression circuit to discharge electrodes via a peaking capacitor overlaps secondary current that infuses energy from the capacitor in the final stage of the magnetic pulse compression circuit to the discharge electrodes, the oscillation cycle of the secondary current is set longer than the oscillation cycle of the primary current, and a pulse of laser oscillation operation is effected by the initial half-cycle of the discharge oscillation current waveform that reverses the polarity of the primary current being overlapped by the secondary current and by at least two half-cycles continuing thereafter, as a result of which a high repetition rate, pulse stretch, line-narrowed ArF excimer laser device and fluorine laser device can be implemented at repetition rate exceeding 2 kHz.