Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cm2 or less.

Abstract: An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm?3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×1018 cm?3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

Abstract: A robot service cooperation system (10) includes a server (12), a mobile terminal (14) and various robots (16a-16c) respectively connected to a network (100). Each of applications (A1, A2, A3, - - - ) on the network is written with cooperation information indicating that which other application can be cooperated with. A CPU (20) of the server specifies (S3) at least based on the cooperation information a plurality of cooperable services that can be provided to a user of the mobile terminal, presents (S7) the specified plurality of services to the user and makes (S13) the user select an arbitrary combination, and makes (S17, S19) a plurality of services constituting the selected combination cooperate mutually by registering at least a start condition of each service into an event queue in association with at least an end event of another service.

Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

Abstract: A flush toilet which including a bowl portion having a waste-receiving surface, a rim and a recess; a water spouting portion for spouting the flush water forwardly; and a drainage conduit. The recess of the bowl portion has a bottom below a pooled water level, and a wall surface connecting between the bottom and a lower edge of the waste-receiving surface, wherein the bottom of the recess has a front bottom surface and a rear bottom surface. The bowl portion is configured to allow flush water to form a major stream which is directed to flow from an front end of the bowl portion toward the inlet of the drainage conduit, and the rear bottom surface of the bottom is configured to allow a part of the major stream to collide therewith, and then guide the collided major stream to a front region inside the drainage conduit.

Abstract: A robot service cooperation system (10) includes a server (12), a mobile terminal (14) and various robots (16a-16c) respectively connected to a network (100). Each of applications (A1, A2, A3, - - - ) on the network is written with cooperation information indicating that which other application can be cooperated with. A CPU (20) of the server specifies (S3) at least based on the cooperation information a plurality of cooperable services that can be provided to a user of the mobile terminal, presents (S7) the specified plurality of services to the user and makes (S13) the user select an arbitrary combination, and makes (S17, S19) a plurality of services constituting the selected combination cooperate mutually by registering at least a start condition of each service into an event queue in association with at least an end event of another service.

Abstract: A flush toilet which includes: a bowl portion having a waste-receiving surface, a rim and a recess; a first rim spout portion which spouts flush water toward a front end of the bowl portion so as to form a swirl flow; and a second rim spout portion which spouts flush water so as to form a swirl flow having a same flow direction as that of the swirl flow formable by the first rim spout portion. The bowl portion is configured to allow flush water spouted from the first rim spout portion to form a major stream which flows from the front end of the bowl portion into the recess, and allow flush water spouted from the second rim spout portion to flow into the recess from a lateral side of the bowl portion and then merge with the major stream M.

Abstract: A flush toilet which includes: a bowl portion having a waste-receiving surface, a rim and a recess; a first rim spout portion which spouts flush water toward a front end of the bowl portion so as to form a swirl flow; and a second rim spout portion which spouts flush water so as to form a swirl flow having a same flow direction as that of the swirl flow formable by the first rim spout portion. The bowl portion is configured to allow flush water spouted from the first rim spout portion to form a major stream which flows from the front end of the bowl portion into the recess, and allow flush water spouted from the second rim spout portion to flow into the recess from a lateral side of the bowl portion and then merge with the major stream M.

Abstract: The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.

Abstract: A flush toilet which including a bowl portion having a waste-receiving surface, a rim and a recess; a water spouting portion for spouting the flush water forwardly; and a drainage conduit. The recess of the bowl portion has a bottom below a pooled water level, and a wall surface connecting between the bottom and a lower edge of the waste-receiving surface, wherein the bottom of the recess has a front bottom surface and a rear bottom surface. The bowl portion is configured to allow flush water to form a major stream which is directed to flow from an front end of the bowl portion toward the inlet of the drainage conduit, and the rear bottom surface of the bottom is configured to allow a part of the major stream to collide therewith, and then guide the collided major stream to a front region inside the drainage conduit.

Abstract: A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.

Abstract: A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.

Abstract: The first invention relates to a water-based ink for ink-jet printing which includes colorant-containing polymer particles (A) obtained by dispersing a colorant with a water-soluble polymer (x) and a water-insoluble polymer (y), a water-soluble organic solvent (B) and water, wherein a weight ratio of the water-insoluble polymer (y) to the water-soluble polymer (x) [(y)/(x)] is from 2.0 to 5.0, and a content of the water-soluble organic solvent (B) in the ink is from 10 to 70% by weight. The water-based ink for ink-jet printing according to the first invention is excellent in ejection property and optical density and exhibits a low viscosity.

Abstract: Disclosed is a semiconductor light emitting element (1) which is provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode (170), and an n-side electrode (400) formed on the n-type semiconductor layer (140). The p-side electrode (300) is provided with a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode (170), and the n-side electrode (400) is provided with an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer (140). The p-side joining layer (310) and the n-side joining layer (410) are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode (320) and the n-side bonding pad electrode (420) are configured of a laminated structure composed of Pt and Au.

Abstract: A gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer of gallium nitride-based compound semiconductors which are formed in this order on a substrate, the negative electrode and the positive electrode being provided in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively. The positive electrode includes a first electrode and an over-coating layer covering the side surfaces and upper surface of the first electrode, and the area where the over-coating layer comes into contact with the p-type semiconductor layer is greater at the corner portions of the positive electrode than at the side portions thereof, per unit length of the outer edge of the first electrode.

Abstract: A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.

Abstract: This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

Abstract: The first invention relates to a water-based ink for ink-jet printing which includes colorant-containing polymer particles (A) obtained by dispersing a colorant with a water-soluble polymer (x) and a water-insoluble polymer (y), a water-soluble organic solvent (B) and water, wherein a weight ratio of the water-insoluble polymer (y) to the water-soluble polymer (x) [(y)/(x)] is from 2.0 to 5.0, and a content of the water-soluble organic solvent (B) in the ink is from 10 to 70% by weight. The water-based ink for ink-jet printing according to the first invention is excellent in ejection property and optical density and exhibits a low viscosity.

Abstract: The present invention relates to a process for producing a water-based pigment dispersion which includes a first step of mixing (A) an emulsion composition including a water-insoluble polymer having a specific weight-average molecular weight and containing a salt-forming group, an organic solvent having a specific solubility in water, a neutralizing agent and water, with (B) a pigment to obtain a preliminary dispersion having a content of non-volatile components of from 5 to 50% by weight and a weight ratio of the organic solvent to water [organic solvent/water] of from 0.1 to 0.