Abstract: Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10?5 mol/m2 to 5.0×10?2 mol/m2.

Abstract: In one aspect, the present disclosure provides cerium oxide'abrasive grains that can improve the polishing rate. One aspect of the present disclosure relates to cerium oxide abrasive grains for use in an abrasive, in which an amount of water production in a temperature range of 300° C. or less measured using temperature-programmed reaction is 8 mmol/m2 or more per unit surface area of the cerium oxide abrasive grains.

Abstract: In one aspect, the present disclosure provides cerium oxide abrasive grains that can improve the polishing rate. One aspect of the present disclosure relates to cerium oxide abrasive grains for use in an abrasive, in which an amount of {100} faces exposed on a surface of each of the cerium oxide abrasive grains is at least 30%.

Abstract: Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10?5 mol/m2 to 5.0×10?2 mol/m2.