Abstract: A first and a second Hall element (2 and 3) for current detection, in addition to a semiconductor element (4) for an electric circuit, are provided on a semiconductor substrate. A conductor layer (5), through which flows the current of the semiconductor element (4), is formed on an insulating film (20) on the surface of the semiconductor substrate. The conductor layer (5) is arranged along the first and second Hall elements (2 and 3) for higher sensitivity. The magnetic flux created by the flow of a current through the conductor layer (5) is applied to the first and second Hall elements (2 and 3). The first and second Hall voltages obtained from the first and second Hall elements (2 and 3) are totaled for higher sensitivity.

Abstract: A Hall-effect semiconductor device is formed on a metal-made baseplate, as of nickel-plated copper, via a magnetic layer of Permalloy or the like. Higher in magnetic permeability than the baseplate, the magnetic layer is designed to reduce the magnetic resistance of the flux path. A plastic encapsulation thoroughly encloses the semiconductor device, magnetic layer, and baseplate.

Abstract: An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer of AlGaInP semiconductor material, an n type cladding layer of either n type AlGaInP or n type AlInP semiconductor material on one side of the active layer, and a p type cladding layer of p type AlGaInP or p type AlInP semiconductor material on another side of the active layer. Unlike the conventional belief that the active layer should be as free as possible from the infiltration of Zn used in the p type cladding layer as an impurity to determine its p conductivity type, and hence as high in crystallinity as possible, Zn is positively doped into the active layer with a concentration of 1.times.10.sup.16 -5.times.10.sup.17 cm.sup.-3.

Abstract: According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height .phi.B which may stably be adjusted in a wide range. A Schottky barrier is formed by combination of an electrode layer, a Ti thin layer and Al layer. The Ti thin oxide layer between the Ti thin and Al layers may prevent variation of barrier height .phi.B during heat treatment. By controlling vacuum.

Abstract: A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resisitve layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.

Abstract: A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.

Abstract: A semiconductor device such as a Schottky-barrier rectifier diode is disclosed which has a barrier electrode formed on a semiconductor substrate of gallium arsenide or the like. Formed around the barrier electrode is an annular resistive layer, typically of titanium oxide, creating a Schottky barrier at its interface with the semiconductor substrate. The resistive layer has a sheet resistance of more than 10 kilohms per square. In order to prevent preliminary breakdowns from taking place at the peripheral part of the resistive layer before final breakdown of the device, the sheet resistance of the resistive layer is made higher as it extends away from the barrier electrode. For the ease of manufacture, the resistive layer can be divided into two or more annular regions of distinctly different sheet resistances.

Abstract: A semiconductor device such as a Schottky-barrier rectifier diode is disclosed which has a barrier electrode formed on a semiconductor substrate of gallium arsenide or the like. Formed around the barrier electrode is an annular resistive layer, typically of titanium oxide, creating a Schottky barrier at its interface with the semiconductor substrate. The resistive layer has a sheet resistance of more than 10 kilohms per square. In order to prevent preliminary breakdowns from taking place at the peripheral part of the resistive layer before final breakdown of the device, the sheet resistance of the resistive layer is made higher as it extends away from the barrier electrode. For the ease of manufacture, the resistive layer can be divided into two or more annular regions of distinctly different sheet resistances.

Abstract: A schottky diode is disclosed which has a barrier electrode formed on a semiconductor substrate for creating a schottky barrier therebetween. Also formed on the substrate is a first resistive region which surrounds the barrier electrode. The first resistive region is higher in sheet resistance than the barrier electrode and also capable of creating a schottky barrier at its interface with the semiconductor substrate. A second resistive region is formed on the first resistive region via an insulating layer and electrically connected to the barrier electrode. The sheet resistance of the second resistive region is less than that of the first resistive region. The first and second resistive regions function to improve the voltage blocking capability of the diode, particularly at the time of instantaneous transition from forward to reverse bias. There is also disclosed herein a method of most efficiently fabricating schottky semiconductor devices of the foregoing general construction.

Abstract: A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.

Abstract: A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junction. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.

Abstract: A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junciton. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.