Patents by Inventor Koji Takayanagi
Koji Takayanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10268116Abstract: A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.Type: GrantFiled: November 17, 2017Date of Patent: April 23, 2019Assignee: Tokyo Electron LimitedInventors: Kousuke Yoshihara, Koji Takayanagi, Toshinobu Furusho, Takashi Sasa, Daisuke Ishimaru
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Patent number: 10256122Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.Type: GrantFiled: May 4, 2018Date of Patent: April 9, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Masato Mizuta, Koji Takayanagi
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Patent number: 10236868Abstract: A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first MOS transistors coupled in series between the second power supply and a reference power supply, and a plurality of second MOS transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first MOS transistors.Type: GrantFiled: March 23, 2018Date of Patent: March 19, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventor: Koji Takayanagi
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Publication number: 20180350777Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.Type: ApplicationFiled: July 24, 2018Publication date: December 6, 2018Applicant: Renesas Electronics CorporationInventor: Koji TAKAYANAGI
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Publication number: 20180269860Abstract: A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first MOS transistors coupled in series between the second power supply and a reference power supply, and a plurality of second MOS transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first MOS transistors.Type: ApplicationFiled: March 23, 2018Publication date: September 20, 2018Inventor: Koji Takayanagi
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Patent number: 10074546Abstract: Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.Type: GrantFiled: September 15, 2014Date of Patent: September 11, 2018Assignee: Tokyo Electron LimitedInventors: Yuichi Terashita, Kousuke Yoshihara, Koji Takayanagi, Toshinobu Furusho, Takashi Sasa
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Publication number: 20180254205Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.Type: ApplicationFiled: May 4, 2018Publication date: September 6, 2018Inventors: Masato MIZUTA, Koji TAKAYANAGI
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Patent number: 10062669Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.Type: GrantFiled: December 29, 2016Date of Patent: August 28, 2018Assignee: Renesas Electronics CorporationInventor: Koji Takayanagi
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Publication number: 20180211832Abstract: There is provided a coated film removing apparatus for removing, with a removal liquid, a peripheral portion of a coated film formed by supplying a coating liquid to a surface of a circular substrate, including: a rotary holding part configured to hold the substrate and rotate together with the substrate; a removal liquid nozzle configured to discharge the removal liquid on a peripheral portion of the surface of the substrate held by the rotary holding part so that the removal liquid is oriented toward a downstream side in a rotational direction of the substrate; and a control part configured to output a control signal so as to rotate the substrate at a rotation speed of 2,300 rpm or more when discharging the removal liquid.Type: ApplicationFiled: January 22, 2018Publication date: July 26, 2018Inventors: Takafumi HASIMOTO, Masahide TADOKORO, Taku NAGAKANE, Koji TAKAYANAGI
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Publication number: 20180205225Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. Agate width of the second transistor is narrower than a gate width of the first transistor.Type: ApplicationFiled: March 12, 2018Publication date: July 19, 2018Applicant: Renesas Electronics CorporationInventors: Masashi ARAKAWA, Tadashi FUKUI, Koji TAKAYANAGI
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Patent number: 9991140Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.Type: GrantFiled: August 3, 2015Date of Patent: June 5, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Masato Mizuta, Koji Takayanagi
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Patent number: 9948090Abstract: Provided is a semiconductor device making it possible to promote area reduction while maintaining ESD resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. The protection circuit includes a first transistor, a first resistive element, a second transistor, a first capacitive element, a first inverter and a protection transistor. A gate width of the second transistor is narrower than a gate width of the first transistor.Type: GrantFiled: September 25, 2015Date of Patent: April 17, 2018Assignee: Renesas Electronics CorporationInventors: Masashi Arakawa, Tadashi Fukui, Koji Takayanagi
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Patent number: 9948283Abstract: When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal. The level shift circuit includes a series coupling circuit, a first gate control circuit coupled to a first power supply, a second gate control circuit coupled to a second power supply of a potential higher than the potential of the first power supply, and a potential conversion circuit arranged between the first gate control circuit and the series coupling circuit. The potential conversion circuit supplies a first level potential, which is lower than the potential of the first power supply and higher than the potential of the reference power supply, to a gate of an N-channel MOS transistor of the series coupling circuit.Type: GrantFiled: January 30, 2017Date of Patent: April 17, 2018Assignee: Renesas Electronics CorporationInventor: Koji Takayanagi
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Patent number: 9947534Abstract: A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.Type: GrantFiled: July 30, 2015Date of Patent: April 17, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Kousuke Yoshihara, Koji Takayanagi, Shinichi Hatakeyama, Kohei Kawakami
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Publication number: 20180074407Abstract: A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.Type: ApplicationFiled: November 17, 2017Publication date: March 15, 2018Applicant: Tokyo Electron LimitedInventors: Kousuke YOSHIHARA, Koji TAKAYANAGI, Toshinobu FURUSHO, Takashi SASA, Daisuke ISHIMARU
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Patent number: 9846363Abstract: A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. The amount of the processing liquid returned to the processing liquid source side in the returning step is larger than the amount of the processing liquid ejected from the ejecting part in the ejecting step.Type: GrantFiled: October 30, 2014Date of Patent: December 19, 2017Assignee: Tokyo Electron LimitedInventors: Kousuke Yoshihara, Koji Takayanagi, Toshinobu Furusho, Takashi Sasa, Daisuke Ishimaru
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Publication number: 20170279438Abstract: When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal. The level shift circuit includes a series coupling circuit, a first gate control circuit coupled to a first power supply, a second gate control circuit coupled to a second power supply of a potential higher than the potential of the first power supply, and a potential conversion circuit arranged between the first gate control circuit and the series coupling circuit. The potential conversion circuit supplies a first level potential, which is lower than the potential of the first power supply and higher than the potential of the reference power supply, to a gate of an N-channel MOS transistor of the series coupling circuit.Type: ApplicationFiled: January 30, 2017Publication date: September 28, 2017Inventor: Koji Takayanagi
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Patent number: 9732910Abstract: A processing-liquid supply apparatus includes a source, a discharge device, a supply channel connecting the source and discharge device, a filter device positioned in the channel to form first side having the source and second side having the discharge device, a pump device positioned in the channel, and a control device which controls suction and discharge by the pump device. The control device controls the pump device such that the liquid is discharged from the discharge device, that remaining of the liquid on the second side is suctioned to be returned to the first side and that the remaining of the liquid returned to the first side flows from the first toward second side together with refill of the liquid from the source, and the control device is set such that return amount of the liquid to the filter device is equal to or greater than amount of the discharge.Type: GrantFiled: September 26, 2014Date of Patent: August 15, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Koji Takayanagi, Kousuke Yoshihara, Yuichi Terashita, Toshinobu Furusho, Takashi Sasa
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Publication number: 20170110442Abstract: A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.Type: ApplicationFiled: December 29, 2016Publication date: April 20, 2017Applicant: Renesas Electronics CorporationInventor: Koji TAKAYANAGI
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Patent number: 9576829Abstract: According to an embodiment of the present disclosure, a process liquid supply apparatus operating method is provided. The method includes filling a filter unit with a process liquid from an upstream side of the filter unit to a downstream side of the filter unit after newly mounting or replacing the filter unit and repeating a depressurization filtering process and a pressurization filtering process for a predetermined number of times. The depressurization filtering process depressurizes the process liquid in the downstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit. The pressurization filtering process pressurizes the process liquid from the upstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit.Type: GrantFiled: October 28, 2016Date of Patent: February 21, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroshi Marumoto, Koji Takayanagi, Kenji Adachi