Patents by Inventor Koji Tateno

Koji Tateno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8680830
    Abstract: Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
    Type: Grant
    Filed: September 12, 2011
    Date of Patent: March 25, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Ryotaro Kudo, Tomoaki Uno, Koji Tateno, Hideo Ishii, Kazuyuki Umezu, Koji Saikusa
  • Patent number: 8638078
    Abstract: A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: January 28, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Ryotaro Kudo, Koji Tateno
  • Patent number: 8604764
    Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: December 10, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Patent number: 8471541
    Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: June 25, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Publication number: 20130076322
    Abstract: Disclosed is a power conversion circuit that suppresses the flow of a through current to a switching element based on a normally-on transistor. The power conversion circuit includes a high-side transistor and a low-side transistor, which are series-coupled to each other to form a half-bridge circuit, and two drive circuits, which complementarily drive the gate of the high-side transistor and of the low-side transistor. The high-side transistor is a normally-off transistor. The low-side transistor is a normally-on transistor.
    Type: Application
    Filed: July 31, 2012
    Publication date: March 28, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Koji TATENO, Takahiro NOMIYAMA, Yoshinao MIURA, Hideo ISHII
  • Publication number: 20130049719
    Abstract: A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time.
    Type: Application
    Filed: August 23, 2012
    Publication date: February 28, 2013
    Inventors: Ryotaro KUDO, Koji Tateno
  • Patent number: 8373484
    Abstract: The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential.
    Type: Grant
    Filed: February 2, 2011
    Date of Patent: February 12, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Ryotaro Kudo, Koji Tateno
  • Publication number: 20130002313
    Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 3, 2013
    Inventors: KYOICHI HOSOKAWA, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Publication number: 20120286365
    Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
    Type: Application
    Filed: May 11, 2012
    Publication date: November 15, 2012
    Inventors: KYOICHI HOSOKAWA, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Patent number: 8305060
    Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: November 6, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Publication number: 20120086416
    Abstract: Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
    Type: Application
    Filed: September 12, 2011
    Publication date: April 12, 2012
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Ryotaro KUDO, Tomoaki UNO, Koji TATENO, Hideo ISHII, Kazuyuki UMEZU, Koji SAIKUSA
  • Publication number: 20120086062
    Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
    Type: Application
    Filed: October 11, 2011
    Publication date: April 12, 2012
    Inventors: KYOICHI HOSOKAWA, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Patent number: 8125206
    Abstract: A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: February 28, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Noboru Akiyama, Takayuki Hashimoto, Takashi Hirao, Koji Tateno
  • Patent number: 8120345
    Abstract: A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: February 21, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Noboru Akiyama, Takayuki Hashimoto, Takashi Hirao, Koji Tateno, Takuya Ishigaki
  • Patent number: 8063620
    Abstract: The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: November 22, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Patent number: 8044520
    Abstract: A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: October 25, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Noboru Akiyama, Takayuki Hashimoto, Masaki Shiraishi, Tetsuya Kawashima, Koji Tateno, Nobuyoshi Matsuura
  • Publication number: 20110127982
    Abstract: The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential.
    Type: Application
    Filed: February 2, 2011
    Publication date: June 2, 2011
    Inventors: Ryotaro KUDO, Koji TATENO
  • Publication number: 20110127975
    Abstract: The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low.
    Type: Application
    Filed: February 9, 2011
    Publication date: June 2, 2011
    Inventors: KYOICHI HOSOKAWA, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Patent number: 7902799
    Abstract: The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: March 8, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
  • Patent number: 7898232
    Abstract: The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: March 1, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Ryotaro Kudo, Koji Tateno