Abstract: A composite integrated module, comprising a formwork; a plurality of frame members mounted on one surface of the formwork; and at least one embedded plate, to which a support member for supporting a first plant structure member is attached, mounted directly to at least one the frame member, wherein one surface, which does not mounted on the frame member, of the embedded plate faces to a direction in which another surface, which does not mounted on the frame member, of the formwork faces.

Abstract: To make it possible to recover calcium fluoride with a high purity that can be used in semiconductor manufacturing in a method that recovers calcium fluoride by having hydrofluoric acid in an etchant waste liquid contact calcium carbonate; a chemical reprocessing method, which includes hydrofluoric acid used in a semiconductor manufacturing process, includes producing calcium fluoride by causing a used chemical including hydrofluoric acid to react with calcium carbonate, the calcium fluoride being produced starting from a state where a pH exceeds 7 and the calcium fluoride is recovered from a reaction column when the pH becomes 7 or below.

Abstract: To make it possible to recover calcium fluoride with a high purity that can be used in semiconductor manufacturing in a method that recovers calcium fluoride by having hydrofluoric acid in an etchant waste liquid contact calcium carbonate; a chemical reprocessing method, which includes hydrofluoric acid used in a semiconductor manufacturing process, includes producing calcium fluoride by causing a used chemical including hydrofluoric acid to react with calcium carbonate, the calcium fluoride being produced starting from a state where a pH exceeds 7 and the calcium fluoride is recovered from a reaction column when the pH becomes 7 or below.

Abstract: A plasma treatment apparatus for plasma treating an object to be treated or workpiece by exposure to ions, free radicals and activated gas species generated by a plasma discharge includes a suscepter electrode supposing the workpiece and another electrode facing the suscepter electrode, together constituting a pair of plasma generating electrodes across which an AC voltage is applied. The apparatus also includes halogen lamps which are disposed outside of the respective electrodes for radiating heat rays to the object. The plasma generating electrodes are formed of a material which transmits the heat rays from the halogen lamp and resists a temperature of about 200.degree. C. or higher, such as a doped silicon in which impurities are doped into a silicon substrate. Thus, the object may be treated in a short time and at a low temperature by heating and using a plasma.