Patents by Inventor Kok Wai Johnny Chew
Kok Wai Johnny Chew has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7573081Abstract: A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.Type: GrantFiled: September 11, 2006Date of Patent: August 11, 2009Assignees: Chartered Semiconductor Manufacturing Ltd., National University of SingaporeInventors: Lap Chan, Kok Wai Johnny Chew, Cher Liang Cha, Chee Tee Chua
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Publication number: 20070007623Abstract: A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.Type: ApplicationFiled: September 11, 2006Publication date: January 11, 2007Inventors: Lap Chan, Kok Wai Johnny Chew, Cher Liang Cha, Chee Tee Chua
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Patent number: 7105420Abstract: A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.Type: GrantFiled: October 7, 1999Date of Patent: September 12, 2006Assignees: Chartered Semiconductor Manufacturing Ltd., National University of SingaporeInventors: Lap Chan, Kok Wai Johnny Chew, Cher Liang Cha, Chee Tee Chua
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Patent number: 7023315Abstract: A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.Type: GrantFiled: May 29, 2003Date of Patent: April 4, 2006Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jianguo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Patent number: 6803848Abstract: A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform.Type: GrantFiled: October 15, 2002Date of Patent: October 12, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Patent number: 6800533Abstract: A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.Type: GrantFiled: March 6, 2000Date of Patent: October 5, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Publication number: 20030205778Abstract: A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.Type: ApplicationFiled: May 29, 2003Publication date: November 6, 2003Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Kiat Seng Yeo, Hat Peng Tan, Jianguo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Patent number: 6611188Abstract: A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.Type: GrantFiled: September 3, 2002Date of Patent: August 26, 2003Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kiat Seng Yeo, Hai Yeng Tan, Jiang Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Patent number: 6586309Abstract: A method of fabricating an inductor using bonding techniques in the manufacture of integrated circuits is described. Bonding pads are provided over a semiconductor substrate. Input/output connections are made to at least two of the bonding pads. A plurality of wire bond loops are made between each two of the bonding pads wherein the plurality of wire bond loops forms the inductor.Type: GrantFiled: April 24, 2000Date of Patent: July 1, 2003Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jianguo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Patent number: 6535098Abstract: A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform.Type: GrantFiled: March 6, 2000Date of Patent: March 18, 2003Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Publication number: 20030043010Abstract: A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform.Type: ApplicationFiled: October 15, 2002Publication date: March 6, 2003Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Publication number: 20030013264Abstract: A new structure is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of spiral design and perpendicular to the plane of the underlying substrate. Conductor line width can be selected as narrow or wide, ferromagnetic material can be used to fill the spaces between the conductors of the spiral inductor. The spiral inductor of the invention can further by used in series or in series with conventional horizontal inductors.Type: ApplicationFiled: September 3, 2002Publication date: January 16, 2003Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Kiat Seng Yeo, Hai Peng Tan, Jian Guo Ma, Manh Anh Do, Kok Wai Johnny Chew
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Patent number: 6140197Abstract: A new method of fabricating an inductor utilizing air as an underlying barrier in the manufacture of integrated circuits is described. A metal line is provided overlying a dielectric layer on a semiconductor substrate. An intermetal dielectric layer is deposited overlying the metal line and the dielectric layer. The intermetal dielectric layer is patterned whereby a plurality of openings are made through the intermetal dielectric layer to the semiconductor substrate. Thereafter, an oxide layer is deposited overlying the intermetal dielectric layer and capping the plurality of openings thereby forming air gaps within the intermetal dielectric layer. A metal plug is formed through the oxide layer and the intermetal dielectric layer to the metal line.Type: GrantFiled: August 30, 1999Date of Patent: October 31, 2000Assignees: Chartered Semiconductor Manufacturing Ltd., National University of SingaporeInventors: Shau-Fu Sanford Chu, Kok Wai Johnny Chew, Chee Tee Chua, Cher Liang Cha