Abstract: There is provided a copper alloy composed of Ni: 5 to 25% by weight, Sn: 5 to 10% by weight, at least one element M selected from the group consisting of Zr, Ti, Fe, and Si: 0.01 to 0.30% by weight in total, at least one element A selected from the group consisting of Mn, Zn, Mg, Ca, Al, and P: 0.01 to 1.00% by weight in total, the balance being Cu and inevitable impurities. Ni-based intermetallic compound grains containing a Ni-M intermetallic compound are formed in the copper alloy. The number of the Ni-based intermetallic compound grains present per unit area of 1 mm2 in the copper alloy is 1.0×103 to 1.0×106.

Abstract: A copper base rolled alloy has a copper base alloy composition containing 0.05 percent by mass or more, and 10 percent by mass or less of at least one type of element selected from Be, Mg, Al, Si, P, Ti, Cr, Mn, Fe, Co, Ni, Zr and Sn, wherein the X-ray diffraction intensity ratio I(111)/I(200) where I(hkl) is the X-ray diffraction intensity from (hkl)plane measured with respect to a rolled surface is 2.0 or more.

Abstract: A method for producing beryllium-copper containing at least Be and Cu, includes holding the beryllium-copper for a predetermined solid solution time in a solid solution temperature range in which the Be is dissolved into the Cu, cooling the beryllium-copper at a cooling speed at which the Be remains dissolved in the Cu, applying plastic strain to a cooled beryllium-copper over multiple times in a processing temperature range in which the Be is not precipitated, and holding the beryllium-copper for a predetermined age hardening time in a precipitation temperature range in which the Be is precipitated.

Abstract: A copper base rolled alloy has a copper base alloy composition containing 0.05 percent by mass or more, and 10 percent by mass or less of at least one type of element selected from Be, Mg, Al, Si, P, Ti, Cr, Mn, Fe, Co, Ni, Zr, and Sn, wherein the X-ray diffraction intensity ratio I(111)/I(200) of (hkl)plane measured with respect to a rolled surface is 2.0 or more.

Abstract: A method for producing beryllium-copper which contains at least Be and Cu, includes holding the beryllium-copper for a predetermined solid solution time in a solid solution temperature range in which Be is dissolved into the Cu; cooling the beryllium-copper at a cooling speed at which the Be remains dissolved in the Cu; applying plastic strain to a cooled beryllium-copper over multiple times in a processing temperature range in which the Be is not precipitated; and holding the beryllium-copper for a predetermined age hardening time in a precipitation temperature range in which the Be is precipitated.

Abstract: A thin-film forming apparatus is provided capable of forming a thin-film by bringing ions of some degree in plasma into contact with the thin-film. This thin-film forming apparatus comprises a plasma generator disposed at a position corresponding to an opening of a vacuum chamber for producing plasma in the vacuum chamber, a base plate holder for holding a substrate in the vacuum chamber, and an ion quencher disposed between the plasma generator and the base plate holder. When the plasma generator is projected directly onto the base plate holder, the projection image of plasma generator shielded by the ion quencher has an area smaller than the residual image of plasma generator projected onto the base plate holder.