Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A solid electrolyte material according to the present disclosure is represented by the following composition formula (1), LiaAlbOcXd . . . Formula (1) where values a, b, c, and d are each greater than 0, and X is at least one selected from the group consisting of CI and Br. A battery according to the present disclosure includes a positive electrode, a negative electrode and an electrolyte layer disposed between the positive electrode and the negative electrode. At least one selected from the group consisting of the positive electrode, the negative electrode, and the electrolyte layer includes the solid electrolyte material according to the present disclosure.

Abstract: A vehicle control device is applied to a vehicle including at least a shift control system configured to switch a shift range. The vehicle control device is configured to control the vehicle to perform autonomous driving travel without depending on an operation of a driver in at least one driving operation. The vehicle control device includes a controller. The controller is configured to determine the propriety of travel by the autonomous driving travel according to a type of abnormality that occurs in the shift control system. The controller is configured to perform travel control of the vehicle according to the propriety of the travel by the autonomous driving travel.

Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.

Abstract: The solid electrolyte material of the present disclosure includes Li, M, O, X, and F. M is at least one element selected from the group consisting of Ta and Nb. X is at least one element selected from the group consisting of Cl, Br, and I.

Abstract: A control device for a vehicle including (i) a power transmission device, (ii) a shift operation device that is to be operated by a driver of the vehicle to an operation position corresponding to a shift position of the power transmission device, and (iii) a switching device for switching the shift position of the power transmission device through actuation of an actuator. The control device is configured, upon occurrence of a momentary interruption of a control-device electric-power source that is supplied with an electric power from a vehicle electric-power source, to not perform an initial position learning process for setting a reference position of the actuator, until a shift switching operation for switching the shift position of the power transmission device is performed by a driver of the vehicle.

Abstract: An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.

Abstract: The present disclosure provides a solid electrolyte material having high lithium ion conductivity. The solid electrolyte material of the present disclosure includes Li, M1, M2 and X, and has a spinel structure. M1 is at least one element selected from the group consisting of Mg and Zn. M2 is at least one element selected from the group consisting of Al, Ga, Y, In and Bi. X is at least one element selected from the group consisting of F, Cl, Br and I.

Abstract: The present disclosure provides a solid electrolyte material having high lithium ion conductivity. The solid electrolyte material of the present disclosure includes Li, M and X. M is at least one element selected from the group consisting of Mg, Zn and Cd. X is at least two elements selected from the group consisting of Cl, Br and I.

Abstract: The present disclosure provides a solid electrolyte material having high lithium ion conductivity. The solid electrolyte material according to the present disclosure has a crystal structure including a structure framework and an ion-conductive species, wherein the structure framework has a one-dimensional chain in which a plurality of polyhedrons are linearly connected to each other while sharing a corner, and each of the plurality of polyhedrons contains at least one type of cation and at least one type of anion.

Abstract: The present disclosure provides a solid electrolyte material having high lithium ion conductivity. A solid electrolyte according to the present disclosure contains Li, Sm, O, and X. X is at least one element selected from the group consisting of Cl, Br, and I.

Abstract: A production method for producing a halide includes heat-treating, in an inert gas atmosphere, a mixed material in which LiX, YZ3, and at least one of LiX? or YZ?3 are mixed, where X is an element selected from the group consisting of Cl, Br, and I; Z is an element selected from the group consisting of Cl, Br, and I and different from X; X is an element selected from the group consisting of Cl, Br, and I and different from either X or Z; and Z? is an element selected from the group consisting of Cl, Br, and I and different from either X or Z. In the heat-treatment, the mixed material is heat-treated at higher than or equal to 200° C. and lower than or equal to 650° C.

Abstract: A solid electrolyte material according to the present disclosure consists essentially of Li, M, O, and X. M is at least one element selected from the group consisting of Nb and Ta, and X is at least one element selected from the group consisting of Cl, Br, and I.

Abstract: To provide a hard capsule composed of a hard capsule film that can be molded by a cold gelation method and has enteric properties.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A control apparatus for a vehicle makes the vehicle travel without depending on operation of a shift operation apparatus by a driver, even in a case where a detection abnormality by which a shift operation position of the shift operation apparatus becomes indefinite has occurred.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.