Patents by Inventor Kon Hoo Teo

Kon Hoo Teo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etch-less AlGaN GaN trigate transistor
    Patent number: 11869946
    Abstract: Devices and methods of a field effect transistor device that include a source, a gate and a drain. The transistor includes a semiconductor region position is under the source, the gate and the drain. Such that the semiconductor region can include a gallium nitride (GaN) layer and an III Nitride (III-N) layer. Wherein the GaN layer includes a band gap, and the III-N layer includes a band gap. Such that the III-N layer band gap is higher than the GaN layer band gap. A sub-region of the semiconductor region is located underneath the gate and is doped with Mg ions at selective locations in the sub-region.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: January 9, 2024
    Assignee: Mitsubishi Electric Research Laboratories, Inc.
    Inventors: Kon Hoo Teo, Nadim Chowdhury
  • Etch-less AlGaN GaN Trigate Transistor
    Publication number: 20210305373
    Abstract: Devices and methods of a field effect transistor device that include a source, a gate and a drain. The transistor includes a semiconductor region position is under the source, the gate and the drain. Such that the semiconductor region can include a gallium nitride (GaN) layer and an III Nitride (III-N) layer. Wherein the GaN layer includes a band gap, and the III-N layer includes a band gap. Such that the III-N layer band gap is higher than the GaN layer band gap. A sub-region of the semiconductor region is located underneath the gate and is doped with Mg ions at selective locations in the sub-region.
    Type: Application
    Filed: March 26, 2020
    Publication date: September 30, 2021
    Applicant: Mitsubishi Electric Research Laboratories, Inc.
    Inventors: Kon Hoo Teo, Nadim Chowdhury