Abstract: One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.

Abstract: An exemplary apparatus includes a testing module connected to, and providing a test voltage to, an integrated circuit containing devices under test. The testing module performs a time-dependent dielectric breakdown (TDDB) test on the devices under test. A decoder is connected to the devices under test and the testing module. The decoder selectively connects each device being tested to the testing module. Efuses are connected to a different one of the devices under test. The efuses separately electrically disconnect each of the devices under test from the test voltage upon failure of a corresponding device under test. Protection circuits are connected between the efuses and a ground voltage. Each protection circuit provides a shunt around the decoder upon failure of the device under test.

Abstract: One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.

Abstract: An exemplary apparatus includes a testing module connected to, and providing a test voltage to, an integrated circuit containing devices under test. The testing module performs a time-dependent dielectric breakdown (TDDB) test on the devices under test. A decoder is connected to the devices under test and the testing module. The decoder selectively connects each device being tested to the testing module. Efuses are connected to a different one of the devices under test. The efuses separately electrically disconnect each of the devices under test from the test voltage upon failure of a corresponding device under test. Protection circuits are connected between the efuses and a ground voltage. Each protection circuit provides a shunt around the decoder upon failure of the device under test.

Abstract: An e-fuse structure including a circuit having an e-fuse operably coupling the circuit to a power source, and a redundant circuit for operably coupling the power source in response to opening of the e-fuse, wherein the e-fuse opens in response to a time-dependent dielectric breakdown (TDDB) percolation current in proximity to the circuit migrating through the e-fuse. A method of programming such an e-fuse structure is also disclosed.

Abstract: The invention relates to an arrangement and to a method for the synchronous determination of the shear modulus and of the Poisson's number on samples of elastically isotropic and anisotropic materials. In the arrangement, an indenter is movable in parallel with its longitudinal axis (A) in the direction of the surface of a sample such that a force action is exerted on the material by its tip. The force can be determined by a device for measuring this force and the indenter is additionally deflected in translation along at least one further axis. The longitudinal axis (A) of the indenter is aligned at an angle ?90° with respect to the surface of the sample and the indenter carries out an upward movement and a downward movement.

Abstract: Structures for an on-chip capacitor and methods of forming an on-chip capacitor. A metal terminal is formed that has a side edge. Metal fingers are formed that have a parallel arrangement. Floating islands comprised of a metal are formed and are electrically isolated from the metal fingers. Each of the metal fingers has an end and extends from the side edge of the metal terminal toward the end. Each of the floating islands is arranged in a spaced relationship with the end of a respective one of the metal fingers.

Abstract: Structures for an on-chip capacitor and methods of forming an on-chip capacitor. A metal terminal is formed that has a side edge. Metal fingers are formed that have a parallel arrangement. Floating islands comprised of a metal are formed and are electrically isolated from the metal fingers. Each of the metal fingers has an end and extends from the side edge of the metal terminal toward the end. Each of the floating islands is arranged in a spaced relationship with the end of a respective one of the metal fingers.

Abstract: The invention relates to an arrangement and to a method for the synchronous determination of the shear modulus and of the Poisson's number on samples of elastically isotropic and anisotropic materials. In the arrangement, an indenter is movable in parallel with its longitudinal axis (A) in the direction of the surface of a sample such that a force action is exerted on the material by its tip. The force can be determined by a device for measuring this force and the indenter is additionally deflected in translation along at least one further axis. The longitudinal axis (A) of the indenter is aligned at an angle ?90° with respect to the surface of the sample and the indenter carries out an upward movement and a downward movement.