Patents by Inventor Kong Lung Samuel Chan

Kong Lung Samuel Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermal chamber with improved thermal uniformity
    Patent number: 11978646
    Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: May 7, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Dongming Iu, Kartik Shah, Norman L. Tam, Matthew Spuller, Jau-Jiun Chen, Kong Lung Samuel Chan, Elizabeth Neville, Preetham Rao, Abhilash J. Mayur, Gia Pham
  • Plasma-enhanced anneal chamber for wafer outgassing
    Patent number: 11348769
    Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: May 31, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Lara Hawrylchak, Matthew D. Scotney-Castle, Norman L. Tam, Matthew Spuller, Kong Lung Samuel Chan, Dongming Iu, Stephen Moffatt
  • PLASMA-ENHANCED ANNEAL CHAMBER FOR WAFER OUTGASSING
    Publication number: 20200402780
    Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
    Type: Application
    Filed: September 8, 2020
    Publication date: December 24, 2020
    Inventors: Lara HAWRYLCHAK, Matthew D. SCOTNEY-CASTLE, Norman L. TAM, Matthew SPULLER, Kong Lung Samuel CHAN, Dongming IU
  • Plasma-enhanced anneal chamber for wafer outgassing
    Patent number: 10770272
    Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Lara Hawrylchak, Matthew D. Scotney-Castle, Norman L. Tam, Matthew Spuller, Kong Lung Samuel Chan, Dongming Iu
  • THERMAL CHAMBER WITH IMPROVED THERMAL UNIFORMITY
    Publication number: 20180337075
    Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.
    Type: Application
    Filed: May 17, 2018
    Publication date: November 22, 2018
    Inventors: Dongming IU, Kartik SHAH, Norman L. TAM, Matthew SPULLER, Jau-Jiun CHEN, Kong Lung Samuel CHAN, Elizabeth NEVILLE, Preetham RAO, Abhilash J. MAYUR, Gia Pham
  • PLASMA-ENHANCED ANNEAL CHAMBER FOR WAFER OUTGASSING
    Publication number: 20170294292
    Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
    Type: Application
    Filed: April 5, 2017
    Publication date: October 12, 2017
    Inventors: Lara HAWRYLCHAK, Matthew D. SCOTNEY-CASTLE, Norman L. TAM, Matthew SPULLER, Kong Lung Samuel CHAN, Dongming IU
  • RTP PROCESS FOR DIRECTED SELF-ALIGNED PATTERNS
    Publication number: 20170221701
    Abstract: A semiconductor processing method and semiconductor device are described. A substrate having a directed self-assembling material disposed thereon is heated to a temperature above the glass transition temperature of the directed self-assembling material, for example from about 325° C. to 380° C., in an RTP process. The substrate is then cooled at a controlled rate of less than 5° C./sec to 100° C. or lower.
    Type: Application
    Filed: February 1, 2017
    Publication date: August 3, 2017
    Inventors: Aaron Muir HUNTER, Kong Lung Samuel CHAN, Christine Y. OUYANG, Ludovic GODET
  • Showerhead for a semiconductor processing chamber
    Patent number: D790039
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: June 20, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lara Hawrylchak, Kong Lung Samuel Chan, Aaron Miller