Patents by Inventor Kongwei Zhu

Kongwei Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar transistor and method for manufacturing the same
    Patent number: 8729669
    Abstract: A method for manufacturing a bipolar transistor includes forming a first epitaxial layer on a semiconductor substrate, forming a second epitaxial layer on the first epitaxial layer, forming an oxide layer on the second epitaxial layer, etching the oxide layer to form an opening in which the second epitaxial layer is exposed, and forming a third epitaxial layer in the opening. The first and third epitaxial layers have a first-type conductivity, and the second epitaxial layer has a second-type conductivity.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: May 20, 2014
    Assignees: CSMC Technologies FAB1 Co., Ltd., CSMC Technologies FAB2 Co., Ltd.
    Inventors: Le Wang, Linchun Gui, Kongwei Zhu, Zhiyong Zhao
  • BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20130001747
    Abstract: A method for manufacturing a bipolar transistor includes forming a first epitaxial layer on a semiconductor substrate, forming a second epitaxial layer on the first epitaxial layer, forming an oxide layer on the second epitaxial layer, etching the oxide layer to form an opening in which the second epitaxial layer is exposed, and forming a third epitaxial layer in the opening. The first and third epitaxial layers have a first-type conductivity, and the second epitaxial layer has a second-type conductivity.
    Type: Application
    Filed: December 2, 2010
    Publication date: January 3, 2013
    Applicants: CSMC TECHNOLOGIES FAB2 CO., LTD., CSMC TECHNOLOGIES FAB1 CO., LTD.
    Inventors: Le Wang, Linchun Gui, Kongwei Zhu, Zhiyong Zhao