Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

Abstract: A method for producing a protective buffer flow in an EUV light source and an EUV mask inspection apparatus are provided. The method includes directing light along a light path from the EUV light source toward a collector. A first buffer gas from a buffer gas injector is injected through a plurality of through holes in the collector. The first buffer gas is directed away from a surface of the collector. A second buffer gas is injected from a ring manifold arranged peripherally to the collector and arranged a first distance toward the light path in relation to the collector. The second buffer gas is directed away from the surface of the collector. The first distance corresponds to a distance from the collector where the first buffer gas merges into a single flow.

Abstract: Methods and systems for determining one or more characteristics of light in an optical system are provided. One system includes first detector(s) configured to detect light having one or more wavelengths shorter than 190 nm emitted from a light source at one or more first angles mutually exclusive of one or more second angles at which the light is collected from the light source by an optical system for illumination of a specimen and to generate first output responsive to the light detected by the first detector(s). In addition, the system includes a control subsystem configured for determining one or more characteristics of the light at one or more planes in the optical system based on the first output.

Abstract: A method for producing a protective buffer flow in an EUV light source and an EUV mask inspection apparatus are provided. The method includes directing light along a light path from the EUV light source toward a collector. A first buffer gas from a buffer gas injector is injected through a plurality of through holes in the collector. The first buffer gas is directed away from a surface of the collector. A second buffer gas is injected from a ring manifold arranged peripherally to the collector and arranged a first distance toward the light path in relation to the collector. The second buffer gas is directed away from the surface of the collector. The first distance corresponds to a distance from the collector where the first buffer gas merges into a single flow.

Abstract: An inspection system and a method of using the same are disclosed. The inspection system comprises an illumination source configured to emit an extreme ultraviolet (EUV) illumination beam for illuminating a sample, one or more first multi-cell detectors configured to generate a first illumination intensity distribution signal based on a first photocurrent, one or more second multi-cell detectors configured to generate a second illumination intensity distribution signal based on a second photocurrent, a detector assembly configured to receive the illumination beam and generate images, and a controller configured to: receive the images from the detector assembly, calibrate the second illumination intensity distribution signal to the images by mapping distortions in the second illumination intensity distribution signal to distorted pixels in the images, increase or decrease intensities of the distorted pixels in the images to generate corrected images, and detect defects on the samples.

Abstract: An inspection system and a method of using the same are disclosed. The inspection system comprises an illumination source configured to emit an extreme ultraviolet (EUV) illumination beam for illuminating a sample, one or more first multi-cell detectors configured to generate a first illumination intensity distribution signal based on a first photocurrent, one or more second multi-cell detectors configured to generate a second illumination intensity distribution signal based on a second photocurrent, a detector assembly configured to receive the illumination beam and generate images, and a controller configured to: receive the images from the detector assembly, calibrate the second illumination intensity distribution signal to the images by mapping distortions in the second illumination intensity distribution signal to distorted pixels in the images, increase or decrease intensities of the distorted pixels in the images to generate corrected images, and detect defects on the samples.

Abstract: Methods and systems for determining one or more characteristics of light in an optical system are provided. One system includes first detector(s) configured to detect light having one or more wavelengths shorter than 190 nm emitted from a light source at one or more first angles mutually exclusive of one or more second angles at which the light is collected from the light source by an optical system for illumination of a specimen and to generate first output responsive to the light detected by the first detector(s). In addition, the system includes a control subsystem configured for determining one or more characteristics of the light at one or more planes in the optical system based on the first output.

Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.

Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.

Abstract: A pulsed laser system includes a variable attenuator located in a secondary optical path bounded by a target surface and one or more reflective surfaces outside of the primary laser oscillator of the laser system. The variable attenuator isolates an output optical amplifier of the laser system from light reflected from the target during time periods between laser pulses. In some embodiments, the variable attenuator is synchronously controlled with the primary laser oscillator. In some other embodiments, the variable attenuator is controlled separately from the primary laser oscillator to shape the generated laser pulses.

Abstract: A pulsed laser system includes a variable attenuator located in a secondary optical path bounded by a target surface and one or more reflective surfaces outside of the primary laser oscillator of the laser system. The variable attenuator isolates an output optical amplifier of the laser system from light reflected from the target during time periods between laser pulses. In some embodiments, the variable attenuator is synchronously controlled with the primary laser oscillator. In some other embodiments, the variable attenuator is controlled separately from the primary laser oscillator to shape the generated laser pulses.