Patents by Inventor Konstantin Vassilevski

Konstantin Vassilevski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having SiC substrate and method for manufacturing the same
    Publication number: 20060273323
    Abstract: A semiconductor device includes: a SiC substrate; a silicide layer disposed on the SiC substrate; and a carbide layer disposed on the silicide layer. The silicide layer includes a first metal, and the carbide layer includes a second metal. The first metal is Ni or Ni alloy, and the second metal is Ti, Ta or W. The device provides excellent ohmic contact and high quality surface metallization construction.
    Type: Application
    Filed: June 7, 2006
    Publication date: December 7, 2006
    Applicants: DENSO CORPORATION, The University of Newcastle upon Tyne
    Inventors: Takeo Yamamoto, Malhan Kumar, Yuuichi Takeuchi, Konstantin Vassilevski, Nicholas Wright
  • Method of forming an ohmic contact in wide band semiconductor
    Patent number: 7141498
    Abstract: A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.
    Type: Grant
    Filed: June 23, 2005
    Date of Patent: November 28, 2006
    Assignees: Denso Corporation, The University of Newcastle upon Tyne
    Inventors: Rajesh Kumar Malhan, Yuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall
  • Method of forming an ohmic contact in wide band semiconductor
    Publication number: 20060205195
    Abstract: A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.
    Type: Application
    Filed: June 23, 2005
    Publication date: September 14, 2006
    Inventors: Rajesh Malhan, Yuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall