Abstract: A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target (12) surface and growing the scattered deposition material on a main surface (100a) of a substrate (100). The method includes the steps of positioning the substrate (100) into a first state where the distance between one end (100f) and the target (12) is small and the distance between the other end (100e) and the target material (12) is relatively large, forming a first film (110) on the substrate (100) in the first state, positioning the substrate (100) into a second state where the distance between one end (100f) and the target (12) is large and the distance between the other end (100e) and the target (12) is small, and. forming a second film (120) on the first film (110) in the second state.

Abstract: A method of producing a superconducting wire comprises the steps of (a) preparing a superconducting precursor powder by treating a material powder for a superconducting use, (b) packing a first metal pipe with the superconducting precursor powder, and (c) sealing the first metal pipe. In the method, the step of packing the first metal pipe and the step of sealing the first metal pipe are performed in an atmosphere under a reduced pressure to reliably perform a degassing treatment of the superconducting powder. Thus, a method of producing a superconducting wire excellent in superconducting property, particularly a critical current, is offered. A production method of a superconducting multifilament wire is offered. A superconducting apparatus produced through these methods is offered.

Abstract: A method of manufacturing an oxide superconductive wire includes the step of positioning a metal tape in a position at a distance (L) of at most 100 mm from a target for generating an oxide, and the step of forming an oxide superconductive layer on the metal tape using a vapor deposition method while transferring the metal tape at a transfer speed of at least 5 m/h with keeping the distance (L) between the metal tape and the target of at most 100 mm.

Abstract: A superconducting wire formed of a metal substrate and an overlying superconducting layer, the metal substrate being a textured metal substrate and planarized to have a surface layer extending from a surface thereof to a depth of 300 nm with a crystal axis offset relative to an orientation axis by at most 25° and a surface roughness RP-V of at most 150 nm, and a method of producing the wire. The surface layer's biaxial texture can be maintained while the substrate can have a surface planarized, and a highly superconductive wire and achieve a method of producing the same can thus be achieved.

Abstract: An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 by the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.

Abstract: An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.

Abstract: A film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is manufactured. In a deposition method, a film is formed by scattering a deposition material from a target (12) surface and growing the scattered deposition material on a main surface (100a) of a substrate (100). The method includes the steps of positioning the substrate (100) into a first state where the distance between one end (100f) and the target (12) is small and the distance between the other end (100e) and the target material (12) is relatively large, forming a first film (110) on the substrate (100) in the first state, positioning the substrate (100) into a second state where the distance between one end (100f) and the target (12) is large and the distance between the other end (100e) and the target (12) is small, and forming a second film (120) on the first film (110) in the second state.