Abstract: There is provided an apparatus including a semiconductor light emitting device formed on a surface of a substrate including a first electrode and a plurality of second electrodes formed adjacent to the first electrode in planar view, a base including an opposite surface facing the surface of the substrate, wherein a third electrode corresponding to the first electrode in positional relationship and a fourth electrode corresponding to the plurality of second electrodes in positional relationship are formed on the opposite surface, first connecting bodies electrically connecting the first electrode with the third electrode, and a second connecting body electrically connecting the plurality of second electrodes with the fourth electrode. The plurality of second electrodes (100) have a belt-like planer shape and centerlines respectively bisecting widths of the plurality of second electrodes are substantially parallel in planar view.

Abstract: This invention provides a nitride semiconductor light emitting device in which current concentration is suppressed without excessively increasing resistance at a low cost without increasing a manufacturing process. The planar shape of a mesa portion configuring a nitride semiconductor light emitting device is a shape containing a convex-shaped tip portion 352b formed by a curved line or a plurality of straight lines and a base portion 352a continuous to the convex-shaped tip portion 352b, in which an obtuse angle is formed by adjacent two straight lines in the convex-shaped tip portion formed by the plurality of straight lines. The first electrode layer 4 has visible outlines 411 and 412 along a visible outline 302 of the mesa portion through a gap 9 in planar view. The relationship between a gap W1 in the convex-shaped tip portion 352b and a gap W2 in the base portion 352a is W1> W2.

Abstract: This invention provides a nitride semiconductor light emitting device in which current concentration is suppressed without excessively increasing resistance at a low cost without increasing a manufacturing process. The planar shape of a mesa portion configuring a nitride semiconductor light emitting device is a shape containing a convex-shaped tip portion 352b formed by a curved line or a plurality of straight lines and a base portion 352a continuous to the convex-shaped tip portion 352b, in which an obtuse angle is formed by adjacent two straight lines in the convex-shaped tip portion formed by the plurality of straight lines. The first electrode layer 4 has visible outlines 411 and 412 along a visible outline 302 of the mesa portion through a gap 9 in planar view. The relationship between a gap W1 in the convex-shaped tip portion 352b and a gap W2 in the base portion 352a is W1> W2.

Abstract: In the case of a OXC device having a route & select-type configuration of the conventional technique, when the port number is 20, then the entire device requires 120 WSSs having a 1×9 configuration. In the case of a route & select-type OXC device having ports more than 20 ports, a large amount of expensive WSSs is required. Thus, such a device is impractical from the viewpoint of cost. Thus, the expansion depending on an increase of traffic at nodes was impossible, flexible scalability could not be provided, and a reasonable network operation from the viewpoint of economy was difficult. According to the OXC device of this disclosure, regardless of the input port number and the output port number of the device, WSSs having a smaller scale than the conventional technique are used and the WSSs are internally-connected from a viewpoint different from that of the conventional technique, thus providing the device having a significantly-reduced cost.

Abstract: A refrigeration cycle apparatus includes: an expansion device including a valve body to control a flow rate of refrigerant; a pipe connected to the expansion device to extend along moving directions, in controlling the flow rate of the refrigerant, of the valve body of the expansion device, and allowing the refrigerant to pass therethrough; and a transmissive sound suppressing member positioned at a first region, which is defined on an outer side of the pipe to cover at least a tip of the valve body of the expansion device, and a second region, which is continuous to the first region and is defined on an outer side of a portion of the pipe including a portion of connection to the expansion device.

Abstract: A nitride semiconductor light emitting element includes a first nitride semiconductor layer of a first conductivity type, nitride semiconductor stacked bodies each of which is formed on a portion of the first nitride semiconductor layer and includes a nitride semiconductor light emitting layer and a second nitride semiconductor layer of a second conductivity type, first electrodes formed on the first nitride semiconductor layer, and second electrodes each of which is formed on the second nitride semiconductor layers of the nitride semiconductor stacked bodies. The first and the second electrodes extend in a first direction. The first and the second electrodes are arranged in parallel with one another with gaps interposed therebetween in a second direction perpendicular to the first direction in plan view. A dimension of first electrodes sandwiched by second electrodes is greater than a dimension of first electrodes not sandwiched by second electrodes in the second direction.

Abstract: This invention aims at providing a nitride semiconductor causing no element breakdown even in driving under a high current density. A nitride semiconductor element is provided with a nitride semiconductor active layer made of AlxGa(1-x)N and a composition change layer made above the nitride semiconductor active layer and made of Alx3Ga(1-x3)N in which an Al composition ratio x3 decreases in a direction away from the nitride semiconductor active layer.

Abstract: A method of manufacturing a light-emitting element including, in the following order, steps of: preparing a wafer on which a semiconductor layer including an light-emission layer is formed; forming a resist film comprising a main body and a protrusion; forming a first metal film; forming a second metal film on the resist film and on the first metal film; pulling the protrusion of the resist film upward by raising and then lowering a temperature of the wafer; forming a third metal film on the second metal film and covering an end of the first metal film by the third metal film; and removing the resist film. In the step of forming the second metal film, the end of the first metal film is exposed from the second metal film.

Abstract: A rotary connector device body in which a rotator and a stator are assembled so as to be relatively rotatable has a housing space that can house an FFC inside. The rotary connector device body has a viewing window that is a through hole through which the housing space is viewed from outside of the rotary connector device body, a cover member disposed at the viewing window so as to cover the viewing window, an outer regulating portion facing outside of the rotary connector device body and disposed so as to be able to contact an outer surface of the cover member, and an inner regulating portion facing the housing space and disposed so as to be able to contact an inner surface of the cover member. The cover member is disposed between an outer regulating portion and an inner regulating portion.

Abstract: A unit for a refrigeration cycle device includes a housing that internally includes a sound field space surrounded by surfaces each reflecting sound waves, an expansion device disposed in the sound field space and configured to adjust a flow rate of refrigerant, a refrigerant pipe disposed in the sound field space and connected to the expansion device, and a sound absorber disposed on at least a part of the surfaces defining the sound field space.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions. The second electrode has a second connecting portion, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. The second extending portions extend beyond the second connecting portion. The first and second connecting portions are symmetrically arranged with respect to a virtual line parallel to one side of the light emitting element.

Abstract: A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion configured to be bonded with a conductive wire, a first extending portion, and two second extending portions. The second electrode has a second connecting portion configured to be bonded with a conductive wire, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the two second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. Each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: A nitride semiconductor light emitting element includes a first nitride semiconductor layer of a first conductivity type, nitride semiconductor stacked bodies each of which is formed on a portion of the first nitride semiconductor layer and includes a nitride semiconductor light emitting layer and a second nitride semiconductor layer of a second conductivity type, first electrodes formed on the first nitride semiconductor layer, and second electrodes each of which is formed on the second nitride semiconductor layers of the nitride semiconductor stacked bodies. The first and the second electrodes extend in a first direction. The first and the second electrodes are arranged in parallel with one another with gaps interposed therebetween in a second direction perpendicular to the first direction in plan view. A dimension of first electrodes sandwiched by second electrodes is greater than a dimension of first electrodes not sandwiched by second electrodes in the second direction.

Abstract: A light emitting element has first and second electrodes. In plan view, the first electrode has a first connecting portion configured to be bonded with a conductive wire, a first extending portion, and two second extending portions. The second electrode has a second connecting portion configured to be bonded with a conductive wire, and two third extending portions. The first extending portion extends linearly toward the second connecting portion, and the two second extending portions are arranged on two sides of the first extending portion. The second extending portions each has two bent portions and a linear portion extending parallel to the first extending portion and disposed between the two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portions. Each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Abstract: A light emitting element has semiconductor layers and first and second electrodes disposed. In plan view, the first electrode has a first connecting portion, a first extending portion, and two second extending portions, and the second electrode has a second connecting portion and two third extending portions. The first extending portion of the first electrode extends linearly from the first connecting portion toward the second connecting portion, and the two second extending portions extend parallel to the first extending portion on two sides of the first extending portion. The second extending portions each has two bent portions. The third extending portions extend parallel to the first extending portion between the first extending portion and the second extending portion. With respect to an extending direction of the first extending portion, each of the second extending portions extends beyond a position of the second connecting portion.

Abstract: There is provided an apparatus including a semiconductor light emitting device formed on a surface of a substrate including a first electrode and a plurality of second electrodes formed adjacent to the first electrode in planar view, a base including an opposite surface facing the surface of the substrate, wherein a third electrode corresponding to the first electrode in positional relationship and a fourth electrode corresponding to the plurality of second electrodes in positional relationship are formed on the opposite surface, first connecting bodies electrically connecting the first electrode with the third electrode, and a second connecting body electrically connecting the plurality of second electrodes with the fourth electrode. The plurality of second electrodes (100) have a belt-like planer shape and centerlines respectively bisecting widths of the plurality of second electrodes are substantially parallel in planar view.

Abstract: In the case of a OXC device having a route & select-type configuration of the conventional technique, when the port number is 20, then the entire device requires 120 WSSs having a 1×9 configuration. In the case of a route & select-type OXC device having ports more than 20 ports, a large amount of expensive WSSs is required. Thus, such a device is impractical from the viewpoint of cost. Thus, the expansion depending on an increase of traffic at nodes was impossible, flexible scalability could not be provided, and a reasonable network operation from the viewpoint of economy was difficult. According to the OXC device of this disclosure, regardless of the input port number and the output port number of the device, WSSs having a smaller scale than the conventional technique are used and the WSSs are internally-connected from a viewpoint different from that of the conventional technique, thus providing the device having a significantly-reduced cost.

Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.