Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Abstract: A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract: According to an embodiment, a communication management apparatus mediates data between an information processing terminal having a temporary memory and an external memory device that is installed outside the information processing terminal. The apparatus includes a receiving unit configured to receive a write request issued by a device other than the information processing terminal for writing the data in the external memory device; a reading-writing unit configured to control reading of the data from the external memory device and control writing of the data in the external memory device; and a delete command issuing unit configured to, when the write request with respect to the external memory device is received, issue a delete command to the information processing terminal for deleting temporary data that is stored in the temporary memory.

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract: A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas.

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract: According to an embodiment, a communication management apparatus mediates data between an information processing terminal having a temporary memory and an external memory device that is installed outside the information processing terminal. The apparatus includes a receiving unit configured to receive a write request issued by a device other than the information processing terminal for writing the data in the external memory device; a reading-writing unit configured to control reading of the data from the external memory device and control writing of the data in the external memory device; and a delete command issuing unit configured to, when the write request with respect to the external memory device is received, issue a delete command to the information processing terminal for deleting temporary data that is stored in the temporary memory.

Abstract: A mobile terminal apparatus includes a casing 8, an operation key member 10 disposed on one external face 9a of the casing 8, a circuit board 11 disposed inside the casing 8 so as to face the operation key member 10, and a battery 12 disposed inside the casing 8 so as to face the circuit board 11 on a side opposite the operation key member 10. The battery 12 includes board supporting parts 15 for supporting the circuit board 11, the board supporting parts 15 having tip portions 15a abutting against the circuit board 11 at positions facing the circuit board 11.

Abstract: An optical pickup according to the present invention includes: a light source 1d for irradiating an optical disk 4 with light; a lens 3 for converging the light onto the optical disk 4; a photodetector 1c having a plurality of detection regions 1cf, 1ct for detecting light which is reflected from a signal surface of the optical disk 4 and converting the light into an electrical signal; a hologram element 1a having a hologram region 1b for guiding the reflected light to the photodetector 1c; and a light-shielding plate 2 for blocking at least a portion of light transmitted through a region of the hologram element 1a other than the hologram region 1b. The light-shielding plate 2 includes a light shielding portion 2b for blocking light, and an aperture 2a for allowing the light to be transmitted therethrough.

Abstract: A mobile terminal apparatus includes a casing 8, an operation key member 10 disposed on one external face 9a of the casing 8, a circuit board 11 disposed inside the casing 8 so as to face the operation key member 10, and a battery 12 disposed inside the casing 8 so as to face the circuit board 11 on a side opposite the operation key member 10. The battery 12 includes board supporting parts 15 for supporting the circuit board 11, the board supporting parts 15 having tip portions 15a abutting against the circuit board 11 at positions facing the circuit board 11.

Abstract: An optical pickup according to the present invention includes: an objective lens 1 for converging laser light onto a signal plane of an optical disc 14; a lens actuator 3, 4, 5 capable of moving the objective lens 1 in a direction at least perpendicular to the signal plane of the optical disc 14; and an actuator base 8 for supporting the lens actuator 3, 4, 5. This optical pickup further includes: an adjustment mechanism 10a, 10b, etc., for defining a height of the actuator base 8 within the optical pickup and defining a tilting angle of the actuator base 8 along a tangential direction 15 of the optical disc 14; and a tilt generating mechanism 6a, 6b, 6c, 6d for changing a tilting angle of the objective lens along a radial direction of the optical disc according to a height of the objective lens 1 relative to the actuator base 8.