Abstract: The object is to provide a technology that can shorten a routing length of a gate wire connecting a control IC that controls driving first and second semiconductor elements that are connected in parallel with each other, to a gate pad of one of the first and second semiconductor elements disposed distant from the control IC. A first semiconductor element and a second semiconductor element are disposed so that a long side of the first semiconductor element faces a side of the second semiconductor element, and a HVIC or a LVIC, the first semiconductor element, and the second semiconductor element are disposed in this order in a direction orthogonal to a first direction, the gate pad is disposed on the first semiconductor element on one side in the first direction, and the gate pad is disposed on the second semiconductor element on the other side in the first direction.

Abstract: A method for manufacturing a vibrator includes a preparation step of preparing a quartz crystal substrate having a first surface and a second surface which are in a front and back relationship, a first protective film formation step of forming a first protective film in an element formation region of the quartz crystal substrate at the first surface where the vibrator is formed; and a first dry etching step of dry etching the quartz crystal substrate from the first surface through the first protective film. R1>R2, in which R1 is a thickness of the first protective film in a first groove formation region of the quartz crystal substrate where the first groove is formed and R2 is a thickness of the first protective film in the second groove formation region where the second groove is formed.

Abstract: A vehicle body rear part structure includes a rear frame and a beam member. The rear frame has: a first inner bead, a first outer bead, a second inner bead, and a second outer bead. The first inner bead and the first outer bead are formed on an inner wall and an outer wall, respectively, in a region close to the beam member. The second inner bead and the second outer bead are formed on the inner wall and the outer wall, respectively, in a region that is separated to a vehicle body frontward direction from the first beads. The first outer bead is formed to have a higher fragility than the first inner bead.

Abstract: Thermosensitive fine particles of the present invention include a side chain crystal polymer which is crystallized at a temperature lower than a melting point and which exhibits fluidity at a temperature equal to or more than the melting point. The side chain crystal polymer may include, as a monomer component, a (meth)acrylate having a straight-chain alkyl group having 14 or more carbon atoms. A mean particle diameter of the fine particles may be 0.1 to 50 ?m. The thermosensitive fine particles may include no organic solvents.

Abstract: A second semiconductor switching element is connected in series with a first semiconductor switching element, and is at least partially stacked on the first semiconductor switching element in the thickness direction. A first control element controls the first semiconductor switching element and the second semiconductor switching element, and performs an overcurrent protection operation with reference to a shunt voltage. The first control element is arranged outside the first semiconductor switching element and the second semiconductor switching element in the in-plane direction.

Abstract: An object is to provide a semiconductor module capable achieving both a heat radiation property and an insulation property. A semiconductor module includes: a substrate having a main surface and a main surface on a side opposite to the main surface; a semiconductor device mounted on the main surface; and a heat sink attached to the main surface via an insulation sheet having a thermal conductivity, wherein the substrate includes a through hole passing from the main surface to the main surface, the semiconductor device includes a plurality of electrodes exposed from a surface facing the main surface and a protrusion formed between the plurality of electrodes to be inserted through the through hole, and the insulation sheet is formed so that a length in a thickness direction of the substrate is larger than a length of a tip end portion of the protrusion protruding from the through hole.

Abstract: A vibration control apparatus configured to control a vibration generated by a vibration apparatus, using a signal, includes processer circuitry, and an energy controller configured to convert a waveform of the signal while maintaining energy of the signal.

Abstract: A semiconductor device includes: a package to seal a semiconductor element; a lead frame having one end portion connected to the semiconductor element and the other end portion protruding from a side surface of the package; a plurality of threaded holes formed in the package to enable the package to be fixed to the substrate; and a resin part capable of closing each of the plurality of threaded holes. A type name of the semiconductor device is represented by open and closed states of the respective threaded holes.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Abstract: A second semiconductor switching element is connected in series with a first semiconductor switching element, and is at least partially stacked on the first semiconductor switching element in the thickness direction. A first control element controls the first semiconductor switching element and the second semiconductor switching element, and performs an overcurrent protection operation with reference to a shunt voltage. The first control element is arranged outside the first semiconductor switching element and the second semiconductor switching element in the in-plane direction.

Abstract: An electrostatic chuck includes: a ceramic dielectric substrate; a base plate; and a heater plate. The heater plate includes a first and a second support plates including a metal, a heater element provided between the first and the second support plates, a first resin layer provided between the first support plate and the heater element, and a second resin layer provided between the second support plate and the heater element. A surface of the first support plate on the second support plate side includes a first region and a second region, the first region overlapping the heater element when viewed along the stacking direction, the second region not overlapping the heater element when viewed along the stacking direction. In a cross section parallel to the stacking direction, the second region protrudes toward the second support plate side compared to the first region.

Abstract: Disclosed is a method for determining a success or failure of a nucleic acid amplification comprising obtaining a measurement value corresponding to the amount of a nucleic acid amplified by a nucleic acid amplification reaction of a measurement sample containing the nucleic acid in a state in which the nucleic acid amplification reaction has reached a saturation state; and determining the success or failure of a nucleic acid amplification reaction based on the acquired measurement value.

Abstract: According to the embodiment, the electrostatic chuck includes a ceramic dielectric substrate having a first major surface and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The ceramic dielectric substrate includes a first hole part positioned between the first major surface and the first porous part. At least one of the ceramic dielectric substrate or the first porous part includes a second hole part positioned between the first hole part and the first porous part, and a dimension of the second hole part is smaller than a dimension of the first porous part and larger than a dimension of the first hole part.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing an object to be processed and a second major surface on an opposite side of the first major surface, and a base plate provided on a side of the second major surface and supporting the ceramic dielectric substrate. The base plate includes a first communicating passage passing a medium which adjusts a temperature of the object to be processed. The first communicating passage has an upper surface, a side surface, and a lower surface. A ratio of variation of a maximum height Sz in the upper surface to a height of the first communicating passage is not more than 1%.

Abstract: An electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a heater plate. The heater plate is provided between the ceramic dielectric substrate and the base plate. The heater plate includes first and second support plates, first and second resin layers, and a heater element. Each of the first and second resin layers is provided between the first support plate and the second support plate. The heater element includes first and second electrically conductive portions. The first electrically conductive portion is provided between the first resin layer and the second resin layer. The second electrically conductive portion is separated from the first electrically conductive portion in an in-plane direction. The first resin layer contacts the second resin layer between the first electrically conductive portion and the second electrically conductive portion.

Abstract: According to the embodiment, an electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object, a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface of the ceramic dielectric substrate and being opposite to the gas introduction path. The first porous part includes a first region positioned on the ceramic dielectric substrate side. The ceramic dielectric substrate includes a first substrate region positioned on the first region side. The first region and the first substrate region are provided in contact with each other, and an average particle diameter in the first region is different from an average particle diameter in the first substrate region.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a heater plate. The ceramic dielectric substrate has a surface where a processing object is placed. The base plate supports the ceramic dielectric substrate. The heater plate is provided between the ceramic dielectric substrate and the base plate. The heater plate includes a first support plate including a metal, a second support plate including a metal, a heater element, a first resin layer, and a second resin layer. The heater element is provided between the first support plate and the second support plate. The heater element emits heat due to a current flowing. The first resin layer is provided between the first support plate and the heater element. The second resin layer is provided between the second support plate and the heater element.

Abstract: According to the embodiment, the first invention relates to an electrostatic chuck. The electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The first porous part includes sparse portions including pores and a dense portion having a density higher than a density of the sparse portions. Each of the sparse portions extends from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the sparse portions. The sparse portions include a wall portion provided between the pores and the pores.

Abstract: According to the embodiment, the first invention relates to an electrostatic chuck. The electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing a suction object and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The first porous part includes sparse portions including pores and a dense portion having a density higher than a density of the sparse portions. Each of the sparse portions extends from the base plate toward the ceramic dielectric substrate. The dense portion is positioned between the sparse portions. The sparse portions include a wall portion provided between the pores and the pores.